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| 型号： | DMG3415U-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 4A SOT-23 |
| 产品目录绘图： | SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 39 毫欧 @ 4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9.1nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 294pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG3415UDIDKR |
DMG3415U
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±8
Units
V
V
Continuous Drain Current (Note 5) V GS = -4.5V
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
Steady
State
T A = +25°C
T A = +70°C
I D
I DM
-4.0
-3.5
-30
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to case (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
R θ JC
T J, T STG
Value
0.9
139
32
-55 to +150
Units
W
°C/W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
— ?
—
—
— ?
—
—
-1
? 10
V
μA
μA
V GS = 0V, I D = -250μA
V DS = -20V, V GS = 0V
V GS = ? 8.0V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
-0.3
-0.55
-1.0
V
V DS = V GS , I D = -250 μ A
—
31
42.5
V GS = -4.5V, I D = -4.0A
Static Drain-Source On-Resistance
R DS(ON)
—
40
53
mΩ
V GS = -2.5V, I D = -3.5A
—
51
71
V GS = -1.8V, I D = -2.0A
Forward Transfer Admittance
|Y fs |
—
3
—
S
V DS = -5V, I D = -4A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C iss
—
294
—
pF
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
C oss
C rss
R g
—
—
— ?
104
25
250
—
—
— ?
pF
pF
?
V DS = -10V, V GS = 0V
f = 1.0MHz
V DS = 0V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 7)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
9.1
1.5
1.7
71
117
795
393
—
—
—
—
—
—
—
nC
nC
nC
ns
ns
ns
ns
V GS = -4.5V, V DS = -10V
I D = -4A
V DS = -10V, V GS = -4.5V,
R D = 2.5Ω, R G = 3.0Ω, I D = -1A
Notes:
5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMG3415U
Document number: DS31735 Rev. 11 - 2
2 of 6
www.diodes.com
February 2014
? Diodes Incorporated
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相关代理商/技术参数 |
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|---|---|
| DMG3415U-7-CUT TAPE | 制造商:DIODES 功能描述:DMG3415U Series 20 V 39 mOhm P-Channel Enhancement Mode Mosfet - SOT-23-3 |
| DMG3415UFY4 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
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