参数资料
型号: DMG1024UV-7
厂商: Diodes Inc
文件页数: 3/6页
文件大小: 0K
描述: MOSFET N-CH DUAL 20V SOT563
标准包装: 1
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 1.38A
开态Rds(最大)@ Id, Vgs @ 25° C: 450 毫欧 @ 600mA,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 0.74nC @ 4.5V
输入电容 (Ciss) @ Vds: 60.67pF @ 16V
功率 - 最大: 530mW
安装类型: 表面贴装
封装/外壳: SOT-563,SOT-666
供应商设备封装: SOT-563
包装: 标准包装
产品目录页面: 1577 (CN2011-ZH PDF)
其它名称: DMG1024UV-7DIDKR
DMG1024UV
0.8
0.6
0.7
0.6
0.5
V GS = 4.5V
T A = 150°C
0.5
0.4
T A = 125°C
0.4
V GS = 1.8V
0.3
T A = 85°C
T A = 25°C
0.3
V GS = 2.5V
V GS = 4.5V
0.2
T A = -55°C
0.2
0.1
0
0.1
0
0
0.3 0.6 0.9 1.2
1.5
0
0.3
0.6 0.9 1.2 1.5
1.7
I D , DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.8
I D , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
1.5
0.6
1.3
V GS = 2.5V
I D = 500mA
1.1
V GS = 4.5V
I D = 1.0A
0.4
V GS = 2.5V
I D = 500mA
0.9
0.7
0.2
V GS = 4.5V
I D = 1.0A
0.5
0
-50
-25 0 25 50 75 100 125 150
-50
-25 0 25 50 75 100 125 150
1.6
T J , JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
10
T J , JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
8
1.2
6
0.8
I D = 250μA
T A = 25°C
4
0.4
2
0
0
-50
-25 0 25 50 75 100 125 150
0.2
0.4 0.6 0.8 1.0
1.2
T A , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
V SD , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
DMG1024UV
Document number: DS31974 Rev. 5 - 2
3 of 6
www.diodes.com
April 2010
? Diodes Incorporated
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