参数资料
型号: DMG1026UV-7
厂商: Diodes Inc
文件页数: 2/6页
文件大小: 0K
描述: MOSFET DL N-CH 60V 410MA SOT-563
标准包装: 1
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 410mA
开态Rds(最大)@ Id, Vgs @ 25° C: 1.8 欧姆 @ 500mA,10V
Id 时的 Vgs(th)(最大): 1.8V @ 250µA
闸电荷(Qg) @ Vgs: 0.45nC @ 10V
输入电容 (Ciss) @ Vds: 32pF @ 25V
功率 - 最大: 580mW
安装类型: 表面贴装
封装/外壳: SOT-563,SOT-666
供应商设备封装: SOT-563
包装: 标准包装
其它名称: DMG1026UV-7DIDKR
DMG1026UV
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
60
±20
Unit
V
V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 6) V GS = 10V
Continuous Drain Current (Note 5) V GS = 4.5V
Continuous Drain Current (Note 6) V GS = 4.5V
Pulsed Drain Current (Note 7)
Steady
State
t ≤ 10s
Steady
State
t ≤ 10s
T A = +25°C
T A = +85°C
T A = +25°C
T A = +85°C
T A = +25°C
T A = +85°C
T A = +25°C
T A = +85°C
I D
I D
I D
I D
I DM
410
300
440
320
380
270
410
295
1.0
mA
mA
mA
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 5)
Power Dissipation (Note 6) t ≤ 10s
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 6) t ≤ 10s
Operating and Storage Temperature Range
Symbol
P D
R θ JA
P D
R θ JA
T J , T STG
Max
0.58
213
0.65
192
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = +25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
60
1.0
±50
±150
V
μA
nA
nA
V GS = 0V, I D = 250 μ A
V DS = 50V, V GS = 0V
V GS = ±5V, V DS = 0V
V GS = ±10V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Continuous Source Current (Note 8)
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
I S
V SD
0.5
80
1.2
1.4
580
0.8
1.8
1.8
2.1
200
1.3
V
?
mS
mA
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 500mA
V GS = 4.5V, I D = 200mA
V DS = 10V, I D = 200mA
-
V GS = 0V, I S = 200mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
32
4.4
2.9
126
0.45
0.08
0.08
3.4
3.4
26.4
16.3
pF
?
pC
ns
ns
ns
ns
V DS = 25V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 4.5V, V DS = 10V,
I D = 250mA
V GS = 10V, V DS = 30V,
R L = 150 ? , R G = 25 ? ,
I D = 200mA
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 PCB with minimum recommended pad layout, measured in t ≤ 10s.
7. Repetitive rating, pulse width limited by junction temperature, 10μs pulse, duty cycle = 1%
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMG1026UV
Document number: DS35068 Rev. 6 - 2
2 of 6
www.diodes.com
February 2014
? Diodes Incorporated
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