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| 型号： | DMG4435SSS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 7.3A 8SOIC |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 11A，20V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 35.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1614pF @ 15V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMG4435SSS-13DIDKR |
DMG4435SSS
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-30
±25
Unit
V
V
Continuous Drain Current (Note 5) V GS = -20
Pulsed Drain Current (Note 6)
Steady State
t < 10s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I DM
-7.3
-5.7
-10
-7.5
-80
A
A
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T A = +25°C
Operating and Storage Temperature Range
T A = +25°C
T A = +70°C
Steady state
t < 10s
P D
R θ JA
T J , T STG
2.5
1.5
96.5
55
-55 to +150
W
W
°C/W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = +25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
-30
—
—
—
—
—
—
-1.0
±100
V
μA
nA
V GS = 0V, I D = -1mA
V DS = -30V, V GS = 0V
V GS = ±25V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
-1.0
-1.7
-2.5
V
V DS = V GS , I D = -250 μ A
13
16
V GS = -20V, I D = -11A
Static Drain-Source On-Resistance
R DS (ON)
—
15
20
m ?
V GS = -10V, I D = -10A
21
29
V GS = -5V, I D = -5A
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
—
—
22
-0.74
—
-1.0
S
V
V DS = -5V, I D = -10A
V GS = 0V, I S = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
—
—
—
—
—
1614
226
214
6.8
35.4
18.9
4.6
5.7
8.6
12.7
44.9
22.8
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
?
nC
nC
nC
nC
ns
ns
ns
ns
V DS = -15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = -10V, V DS = -15V, I D = -10A
V GS = -5V, V DS = -15V,
I D = -10A
V DS = -15V, V GS = -10V,
R L = 1.5 ? , R GEN = 3 ? ,
Notes:
5. Device mounted on 1in. x 1in. FR-4 PCB with 2oz. Copper, and the testing is based on the t<10s. The value in any given application depends on the
user’s specific board design.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG4435SSS
Document number: DS32041 Rev. 5 - 2
2 of 6
www.diodes.com
September 2013
? Diodes Incorporated
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