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| 型号： | DMG6968U-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 6.5A SOT-23 |
| 产品目录绘图： | SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 6.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 900mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 151pF @ 10V |
| 功率 - 最大： | 810mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG6968UDIDKR |
DMG6968U
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±12
Units
V
V
Continuous Drain Current (Note 6)
Pulsed Drain Current
Steady
State
T A = +25°C
T A = +70°C
I D
I DM
6.5
5.2
30
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @ T A = +25°C
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
1.3
157
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
20
?
?
V
V GS = 0V, I D = 250μA
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Breakdown Voltage
T J = +25°C
I DSS
I GSS
BV SGS
?
?
±12
?
?
—
1.0
±10
—
μA
μA
V
V DS = 20V, V GS = 0V
V GS = ? 10V, V DS = 0V
V DS = 0V, I G = ? 250μA
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
0.5
?
0.9
V
V DS = V GS , I D = 250μA
21
25
V GS = 4.5V, I D = 6.5A
Static Drain-Source On-Resistance
R DS(ON)
?
23
29
m ?
V GS = 2.5V, I D = 5.5A
28
36
V GS = 1.8V, I D = 3.5A
Forward Transfer Admittance
|Y fs |
?
8
?
S
V DS = 10V, I D = 5A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
?
?
?
151
91
32
8.5
1.6
2.8
54
66
613
205
?
?
?
?
?
?
?
?
?
?
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V DS = 10V, V GS = 0V
f = 1.0MHz
V GS = 4.5V, V DS = 10V, I D = 6.5A
V DD = 10V, V GS = 4.5V,
R L = 10 ? , R G = 6 ? , I D = 1A
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal vias to bottom layer 1 inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG6968U
Document number: DS31738 Rev. 6 - 2
2 of 6
www.diodes.com
October 2013
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMG6968UDM | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG6968UDM-7 | 功能描述:MOSFET DUAL N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG6968UQ-7 | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance |
| DMG6968UTS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG6968UTS-13 | 功能描述:MOSFET N-Ch Dual MOSFET 20V VDSS 30A IDM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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