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参数资料
| 型号： | DMN2005LP4K-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 200MA 3-DFN |
| 其它图纸： | DFN1006H4-3 Side DFN1006H4-3 Bottom |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 200mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 欧姆 @ 10mA，4V |
| Id 时的 Vgs(th)（最大）： | 900mV @ 100µA |
| 输入电容 (Ciss) @ Vds： | 41pF @ 3V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | 3-DFN1006H4（1.0x0.6） |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN2005LP4KDIDKR |
DMN2005LP4K
Maximum Ratings (@T A = 25°C unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
± 10
Unit
V
V
Drain Current per element (Note 5)
Continuous
Pulsed (Note 6)
I D
300
350
mA
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
400
280
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@T A = 25°C unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (per element) (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
?
?
?
?
?
?
10
± 5
V
μA
μA
V GS = 0V, I D = 100μA
V DS = 17V, V GS = 0V
V GS = ± 8V, V DS = 0V
ON CHARACTERISTICS (per element) (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
V GS(th)
R DS (ON)
? Y fs ?
0.53
?
?
?
?
?
40
?
0.35
0.4
0.45
0.55
0.65
?
0.9
1.5
1.7
1.7
3.5
3.5
?
V
Ω
mS
V DS = V GS , I D = 100μA
V GS = 4V, I D = 10mA
V GS = 2.7V, I D = 200mA
V GS = 2.5V, I D = 10mA
V GS = 1.8V, I D = 200mA
V GS = 1.5V, I D = 1mA
V DS = 3V, I D = 10mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
37.1
6.5
4.8
?
?
?
pF
pF
pF
V DS = 10V, V GS = 0V
f = 1.0MHz
Switching Time
Turn-on Time
Turn-off Time
t on
t off
?
?
4.06
13.7
?
?
nS
V DD = 10V, R l = 47 ? , V GEN = 4.5V,
R GEN = 10 ? .
Notes:
5. Device mounted on FR-4 PCB.
6. Pulse width ≤ 10 μ S, Duty Cycle ≤ 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN2005LP4K
Document number: DS30799 Rev. 6 - 2
2 of 6
www.diodes.com
June 2012
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2005LP4K-7-01 | 制造商:Diodes Incorporated 功能描述:MOSFET DUAL N-CHANNEL SOT-363 GREEN 3K - Tape and Reel |
| DMN2005LPK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LPK_0710 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LPK-7 | 功能描述:MOSFET 20V 200mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2009LSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:5SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET |
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