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参数资料
| 型号： | DMN2005LPK-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 440MA 3-DFN |
| 产品变化通告： | Bond Wire Change 11/Nov/2011 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 440mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 欧姆 @ 10mA，4V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 100µA |
| 功率 - 最大： | 450mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | 3-DFN1006（1.0x0.6） |
| 包装： | 标准包装 |
| 其它名称： | DMN2005LPK-7DIDKR |
DMN2005LPK
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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Low On-Resistance
Low Gate Threshold Voltage
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) ?
ESD Protected Gate
Qualified to AEC-Q101 Standards for High Reliability
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Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.001 grams (approximate)
Drain
X1-DFN1006-3
D
S
Gate
Gate
Body
Diode
G
Protection
Diode
Source
ESD PROTECTED
Bottom View
Top View
Internal Schematic
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN2005LPK -7
DMN2005LPK -7B
Marking
DM
DM
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN2005LPK -7
DMN2005LPK -7B
DM
Top View
Dot Denotes
Drain Side
DMN2005LPK
Document number: DS30836 Rev. 9 - 2
DM
Top View
Bar Denotes Gate
and Source Side
1 of 6
www.diodes.com
DM = Product Type Marking Code
June 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN2009LSS-13 | MOSFET N-CH 20V 12A 8-SOIC |
| DMN2013UFDE-7 | MOSF N CH 20V 10.5A U-DFN2020-6 |
| DMN2015UFDE-7 | MOSF N CH 20V 10.5A U-DFN2020-6E |
| DMN2016LFG-7 | MOSFET N CH DUAL 20V 5.2A |
| DMN2016UTS-13 | MOSFET N-CH 20V 8.58A 8-TSSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2009LSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:5SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2009LSS-13 | 功能描述:MOSFET NMOS SINGLE N-CHANNL 20V 12A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2013UFDE | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2013UFDE-13 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2013UFDE-7 | 功能描述:MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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