- 您现在的位置：买卖IC网 > Datasheet目录405 > DMN2015UFDE-7 (Diodes Inc)MOSF N CH 20V 10.5A U-DFN2020-6E Datasheet资料下载
参数资料
| 型号： | DMN2015UFDE-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSF N CH 20V 10.5A U-DFN2020-6E |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11.6 毫欧 @ 8.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 45.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1779pF @ 10V |
| 功率 - 最大： | 660mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UDFN |
| 供应商设备封装： | * |
| 包装： | 标准包装 |
| 其它名称： | DMN2015UFDE-7DIDKR |
DMN2015UFDE
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
?
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm
V (BR)DSS
20V
R DS(ON) max
11.6m Ω @ V GS = 4.5V
15m ? @ V GS = 2.5V
Package
U-DFN2020-6
Type E
I D max
T A = +25°C
10.5A
9.4A
?
?
?
?
?
2
Low Gate Threshold Voltage
Low On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) ?
?
Qualified to AEC-Q101 Standards for High Reliability
Description
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
? General Purpose Interfacing Switch
?
?
?
?
?
Case: U-DFN2020-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)
?
Power Management Functions
U-DFN2020-6 Type E
Pin1
Gate
Drain
Source
Bottom View
Ordering Information (Note 4)
Bottom View
Pin Out
Equivalent Circuit
Part Number
DMN2015UFDE-7
DMN2015UFDE-13
Marking
N4
N4
Reel size (inches)
7
13
Quantity per reel
3,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
N4 = Product Type Marking Code
N4
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN2015UFDE
D atasheet number: DS35560 Rev. 9 - 2
1 of 6
www.diodes.com
July 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN2016LFG-7 | MOSFET N CH DUAL 20V 5.2A |
| DMN2016UTS-13 | MOSFET N-CH 20V 8.58A 8-TSSOP |
| DMN2019UTS-13 | MOSFET 2N-CH 20V 5.4A TSSOP-8 |
| DMN2020LSN-7 | MOSFET N-CH 20V 6.9A SC59 |
| DMN2028USS-13 | MOSFET N-CH 20V 7.3A SO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2016LFG-7 | 功能描述:MOSFET MOSFET N-CHANNEL DFN DFN3030-8 GREEN 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2016LHAB-7 | 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 8V-24V U-DFN2030-6 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSF N CH DL 20V 7.5A UDFN20306 制造商:Diodes Incorporated 功能描述:Dual MOSFET N-channel 20V 7.5A DFN2030-6 |
| DMN2016UTS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2016UTS-13 | 功能描述:MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2019UTS-13 | 功能描述:MOSFET MOSFET BVDSS: 8V-24V 24V TSSOP-8 T&R 2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。