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参数资料
| 型号： | DMN2028USS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 7.3A SO8 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 9.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1000pF @ 10V |
| 功率 - 最大： | 1.56W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | DMN2028USS-13DIDKR |
A Product Line of
Diodes Incorporated
DMN2028USS
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
20V
R DS(on) max
20m Ω @ V GS = 4.5V
28m Ω @ V GS = 2.5V
I D max
T A = 25 ° C
(Note 3)
9.8A
8.3A
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Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Output Leakage
ESD Protected Up to 2kV
Lead Free/RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 1)
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Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
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Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
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Battery charging
Power management functions
DC-DC converters
Portable power adaptors
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Terminal Connections: See Diagram Below
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
SO-8
S
S
S
G
D
D
D
D
G
D
S
ESD PROTECTED TO 2kV
Top View
Ordering Information (Note 1)
Top View
Equivalent Circuit
Product
DMN2028USS-13
Marking
N2028US
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
Notes:
1. No purposefully added lead. Diodes Inc.'s "Green" policy and packaging details can be found on our website at http://www.diodes.com
Marking Information
= Manufacturer’s Marking
N2028US = Product Type Marking Code
N2028US
YY WW
YYWW = Date Code Marking
YY = Year (ex: 10 = 2010)
WW = Week (01-53)
DMN2028USS
Document number: DS32075 Rev. 3 - 2
1 of 8
www.diodes.com
October 2010
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN2040LSD-13 | MOSFET N-CH DUAL 20V 7.0A 8-SOIC |
| DMN2040LTS-13 | MOSFET 2N-CH 20V 6.7A 8TSSOP |
| DMN2041L-7 | MOSFET N-CH 20V 6.4A SOT23 |
| DMN2041LSD-13 | MOSFET 2N-CH 20V 7.63A SO8 |
| DMN2050L-7 | MOSFET N-CH 20V 5.9A SOT23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2040LSD | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2040LSD-13 | 功能描述:MOSFET DUAL N-CHANNEL ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2040LTS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2040LTS-13 | 功能描述:MOSFET ENHANCE MODE MOSFET DUAL N-CHAN RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2041L | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
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