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| 型号： | DMN2028USS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 7.3A SO8 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 9.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1000pF @ 10V |
| 功率 - 最大： | 1.56W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | DMN2028USS-13DIDKR |
A Product Line of
Diodes Incorporated
DMN2028USS
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source voltage
Gate-Source voltage
Characteristic
(Note 3)
Symbol
V DSS
V GS
Value
20
± 12
9.8
Unit
V
Continuous Drain current
Pulsed Drain current
V GS = 4.5V
V GS = 4.5V
T A = 70°C (Note 3)
(Note 2)
(Note 4)
I D
I DM
7.9
7.3
45.0
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 3)
(Note 4)
I S
I SM
6.0
45.0
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 2)
(Note 3)
(Note 2)
(Note 3)
(Note 5)
P D
R θ JA
R θ JL
T J , T STG
1.56
12.5
2.81
22.5
80.0
44.5
37.0
-55 to 150
W
mW/ ° C
° C/W
° C
Notes:
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300μs.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMN2028USS
Document number: DS32075 Rev. 3 - 2
2 of 8
www.diodes.com
October 2010
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN2040LSD-13 | MOSFET N-CH DUAL 20V 7.0A 8-SOIC |
| DMN2040LTS-13 | MOSFET 2N-CH 20V 6.7A 8TSSOP |
| DMN2041L-7 | MOSFET N-CH 20V 6.4A SOT23 |
| DMN2041LSD-13 | MOSFET 2N-CH 20V 7.63A SO8 |
| DMN2050L-7 | MOSFET N-CH 20V 5.9A SOT23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2040LSD | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2040LSD-13 | 功能描述:MOSFET DUAL N-CHANNEL ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2040LTS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2040LTS-13 | 功能描述:MOSFET ENHANCE MODE MOSFET DUAL N-CHAN RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2041L | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
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