- 您现在的位置：买卖IC网 > Datasheet目录405 > DMN2040LSD-13 (Diodes Inc)MOSFET N-CH DUAL 20V 7.0A 8-SOIC Datasheet资料下载
参数资料
| 型号： | DMN2040LSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 20V 7.0A 8-SOIC |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 26 毫欧 @ 6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 562pF @ 10V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN2040LSDDIDKR |
DMN2040LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features
Mechanical Data
?
?
?
?
?
?
?
?
?
Dual N-Channel MOSFET
Low On-Resistance
? 26m ? @ V GS = 4.5V
? 36m ? @ V GS = 2.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q 101 Standards for High Reliability
S1
D1
SOP-8L
?
?
?
?
?
?
?
?
Case: SOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072 grams (approximate)
D 1
D 2
TOP VIEW
G1
S2
G2
TOP VIEW
Internal Schematic
D1
D2
D2
G 1
S 1
N-Channel MOSFET
G 2
S 2
N-Channel MOSFET
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
± 12
Units
V
V
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
Steady
State
T A = 25°C
T A = 70°C
I D
I DM
7.0
5.6
30
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
@T A = 25°C unless otherwise specified
Symbol
P D
R θ JA
T J, T STG
Value
2
62.5
-55 to +150
Unit
W
°C/W
°C
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
?
?
?
?
?
?
1
± 100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 20V, V GS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
V GS(th)
R DS (ON)
g fs
V SD
0.6
?
?
0.5
?
19
26
12
?
1.2
26
36
?
1.2
V
m Ω
ms
V
V DS = V GS , I D = 250 μ A
V GS = 4.5V, I D = 6.0A
V GS = 2.5V, I D = 5.2A
V DS = 10V, I D = 6.0A
V GS = 0V, I S = 1.7A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
562
75
65
?
?
?
pF
pF
pF
V DS = 10V, V GS = 0V
f = 1.0MHz
Notes:
1.
2.
3.
4.
5.
Device mounted on 2 oz. Copper pads on FR-4 PCB.
No purposefully added lead.
Pulse width ≤ 10 μ S, Duty Cycle ≤ 1%.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
DMN2040LSD
Document number: DS31517 Rev. 4 - 2
1 of 4
www.diodes.com
November 2008
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN2040LTS-13 | MOSFET 2N-CH 20V 6.7A 8TSSOP |
| DMN2041L-7 | MOSFET N-CH 20V 6.4A SOT23 |
| DMN2041LSD-13 | MOSFET 2N-CH 20V 7.63A SO8 |
| DMN2050L-7 | MOSFET N-CH 20V 5.9A SOT23-3 |
| DMN2065UW-7 | MOSFET N CH 20V 2.8A SOT323 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2040LTS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2040LTS-13 | 功能描述:MOSFET ENHANCE MODE MOSFET DUAL N-CHAN RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2041L | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2041L-7 | 功能描述:MOSFET MOSFET,N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2041LSD | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
发布紧急采购，3分钟左右您将得到回复。