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参数资料
| 型号： | DMN2050L-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 5.9A SOT23-3 |
| 产品目录绘图： | SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 29 毫欧 @ 5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 532pF @ 10V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN2050LDIDKR |
DMN2050L
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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Low On-Resistance
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Case: SOT23
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29m ? @V GS = 4.5V
50m ? @V GS = 2.5V
100m ? @V GS = 2.0V
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Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
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Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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Terminal Connections: See Diagram
Terminals: Finish ? Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.008 grams (approximate)
SOT23
Drain
D
Gate
Source
G
S
Ordering Information
Part Number
DMN2050L-7
(Note 4)
Top View
Equivalent Circuit
Case
SOT23
Top View
Packaging
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MN3 = Marking Code
Date Code Key
MN3
Chengdu A/T Site
MN3
Shanghai A/T Site
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Year
Code
2008
V
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN2050L
Document number: DS31502 Rev. 4 - 2
1 of 6
www.diodes.com
October 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN2065UW-7 | MOSFET N CH 20V 2.8A SOT323 |
| DMN2075U-7 | MOSFET N-CH 20V 4.2A SOT23 |
| DMN2075UDW-7 | MOSFET N-CH 20V 2.8A SOT363 |
| DMN2100UDM-7 | MOSFET N-CH 20V 3.3A SOT-26 |
| DMN2104L-7 | MOSFET N-CH 20V 4.3A SOT-23 |
相关代理商/技术参数 |
参数描述 |
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| DMN2050LFDB-13 | 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 10K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET N-CH 20V DUAL U-DFN2020-6 制造商:Diodes Incorporated 功能描述:DUAL N-CH EH MODE 20V 45mOhm 4.5A |
| DMN2050LFDB-7 | 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET N-CH 20V DUAL U-DFN2020-6 制造商:Diodes Incorporated 功能描述:DUAL N-CH EH MODE 20V 45mOhm 4.5A |
| DMN2065UW-7 | 功能描述:MOSFET MOSFET BVDSS: 8V-24V 8V-24V SOT323 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2075U | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
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