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| 型号： | DMN2050L-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 5.9A SOT23-3 |
| 产品目录绘图： | SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 29 毫欧 @ 5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 532pF @ 10V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN2050LDIDKR |
DMN2050L
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Symbol
V DSS
V GSS
I D
I DM
Value
20
±12
5.9
21
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
1.4
90
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
?
?
?
?
?
?
1
? 100
V
μA
nA
V GS = 0V, I D = 250μA
V DS = 20V, V GS = 0V
V GS = ? 12V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
0.45
?
1.4
V
V DS = V GS , I D = 250μA
24
29
V GS = 4.5V, I D = 5.0A
Static Drain-Source On-Resistance
R DS(ON)
?
42
50
m ?
V GS = 2.5V, I D = 3.1A
68
100
V GS = 2.0V, I D = 1.5A
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
|Y fs |
V SD
?
?
8
0.9
?
1.4
S
V
V DS =5V, I D = 2.1A
V GS = 0V, I S = 2.0A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C iss
C oss
C rss
R G
?
?
?
??
532
144
117
1.3
?
?
?
??
pF
pF
pF
?
V DS = 10V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Q g
??
6.7
??
V DS = 10V, V GS = 4.5V, I D = 5.0A
Gate-Source Charge
Gate-Drain Charge
Q gs
Q gd
??
??
0.8
3.0
??
??
nC
V DS = 10V, V GS = 4.5V, I D = 5.0A
V DS = 10V, V GS = 4.5V, I D = 5.0A
Notes:
5. Device mounted on FR-4 PCB, on 2oz Copper pad layout with R θ JA = 90°C/W.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN2050L
Document number: DS31502 Rev. 4 - 2
2 of 6
www.diodes.com
October 2013
? Diodes Incorporated
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