参数资料
型号: DMN2040LTS-13
厂商: Diodes Inc
文件页数: 1/6页
文件大小: 0K
描述: MOSFET 2N-CH 20V 6.7A 8TSSOP
标准包装: 1
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 6.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 26 毫欧 @ 6A,4.5V
Id 时的 Vgs(th)(最大): 1.2V @ 250µA
闸电荷(Qg) @ Vgs: 5.2nC @ 4.5V
输入电容 (Ciss) @ Vds: 570pF @ 10V
功率 - 最大: 890mW
安装类型: 表面贴装
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP
包装: 标准包装
产品目录页面: 1577 (CN2011-ZH PDF)
其它名称: DMN2040LTS-13DIDKR
DMN2040LTS
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features
Mechanical Data
?
?
?
?
?
?
?
?
?
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
?
?
?
?
?
?
?
Case: TSSOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.039 grams (approximate)
D1
D2
G1
G2
1
2
3
D
S1
S1
D
S2
S2
8
7
6
TOP VIEW
BOTTOM VIEW
4
G1
Top View
G2
5
S1
Internal Schematic
S2
Pin Configuration
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±12
Unit
V
V
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Steady
State
T A = 25°C
T A = 70°C
I D
I DM
6.7
4.9
30
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T A = 25°C
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
Symbol
P D
R θ JA
T J , T STG
Value
0.89
140
-55 to +150
Unit
W
°C/W
°C
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
DMN2040LTS
Document number: DS31941 Rev. 2 - 2
1 of 6
www.diodes.com
October 2009
? Diodes Incorporated
相关PDF资料
PDF描述
DMN2041L-7 MOSFET N-CH 20V 6.4A SOT23
DMN2041LSD-13 MOSFET 2N-CH 20V 7.63A SO8
DMN2050L-7 MOSFET N-CH 20V 5.9A SOT23-3
DMN2065UW-7 MOSFET N CH 20V 2.8A SOT323
DMN2075U-7 MOSFET N-CH 20V 4.2A SOT23
相关代理商/技术参数
参数描述
DMN2041L 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2041L-7 功能描述:MOSFET MOSFET,N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2041LSD 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2041LSD-13 功能描述:MOSFET MOSFET DUAL N-CHAN ENHANCE MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2050L 制造商:Diodes Incorporated 功能描述:MOSFET N CH 20V 5.9A SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 20V, 5.9A, SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 20V, 5.9A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.4W; No. of Pins:3 ;RoHS Compliant: Yes