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| 型号： | DMN2028USS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 7.3A SO8 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 9.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1000pF @ 10V |
| 功率 - 最大： | 1.56W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | DMN2028USS-13DIDKR |
A Product Line of
Diodes Incorporated
DMN2028USS
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
-
-
-
-
-
-
1.0
±10
V
μ A
μ A
V GS = 0V, I D = 250 μ A
V DS = 20V, V GS = 0V
V GS = ±12V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 6)
Forward Transfer Admittance (Note 6 & 7)
Diode Forward Voltage (Note 6)
V GS(th)
R DS (ON)
|Y fs |
V SD
0.6
-
-
-
1.0
11
15
16
0.7
1.3
20
28
-
1.3
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 4.5V, I D = 9.4A
V GS = 2.5V, I D = 8.3A
V DS = 5V, I D = 9.4A
V GS = 0V, I S = 1.3A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (Note 8)
C iss
C oss
C rss
R g
Q g
-
-
-
-
-
1000
166
158
1.51
7.0
-
-
-
-
-
pF
?
V DS = 10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 2.5V
Total Gate Charge (Note 8)
Gate-Source Charge (Note 8)
Q g
Q gs
-
-
11.6
2.7
-
-
nC
V GS = 4.5V
V DS = 10V
I D = 9.4A
Gate-Drain Charge (Note 8)
Turn-On Delay Time (Note 8)
Q gd
t D(on)
-
-
3.4
11.67
-
-
Turn-On Rise Time (Note 8)
Turn-Off Delay Time (Note 8)
Turn-Off Fall Time (Note 8)
t r
t D(off)
t f
-
-
-
12.49
35.89
12.33
-
-
-
ns
V GS = 4.5V, V DS = 10V,
R G = 6 ? , I D = 1A
Notes:
6. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperatures.
30
25
20
15
V GS = 10V
V GS = 4.5V
V GS = 4.0V
V GS = 3.5V
V GS = 3.0V
V GS = 2.5V
20
15
10
V GS = 2.0V
10
5
T A = 150°C
5
V GS = 1.8V
T A = 125°C
T A = 85°C
T A = 25°C
T A = -55°C
0
0
0.5 1 1.5
2
0
0
0.5 1 1.5 2 2.5
3
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMN2028USS
Document number: DS32075 Rev. 3 - 2
4 of 8
www.diodes.com
October 2010
? Diodes Incorporated
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