参数资料
型号: DMN2020LSN-7
厂商: Diodes Inc
文件页数: 1/6页
文件大小: 0K
描述: MOSFET N-CH 20V 6.9A SC59
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 6.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 20 毫欧 @ 9.4A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 11.6nC @ 4.5V
输入电容 (Ciss) @ Vds: 1149pF @ 10V
功率 - 最大: 610mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SC-59-3
包装: 标准包装
产品目录页面: 1577 (CN2011-ZH PDF)
其它名称: DMN2020LSN-7DIDKR
DMN2020LSN
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2KV
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SC-59
Case Material - Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.014 grams (approximate)
SC-59
Drain
D
Gate
Gate
Protection
Diode
Source
G
TOP VIEW
S
ESD PROTECTED TO 2kV
TOP VIEW
EQUIVALENT CIRCUIT
Pin Out Configuration
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Characteristic
Symbol
V DSS
Value
20
Units
V
Gate-Source Voltage
Continuous
V GSS
±12
V
Continuous Drain Current
Pulsed Drain Current (Note 4)
Steady
State
T A = 25°C
T A = 85°C
I D
I DM
6.9
4.5
30
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 3)
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
Symbol
P D
R θ JA
T J , T STG
Value
0.61
204
-55 to +150
Units
W
° C /W
° C
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
DMN2020LSN
Document number: DS31946 Rev. 3 - 2
1 of 6
www.diodes.com
August 2011
? Diodes Incorporated
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