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| 型号： | DMN2020LSN-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 6.9A SC59 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 9.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1149pF @ 10V |
| 功率 - 最大： | 610mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SC-59-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN2020LSN-7DIDKR |
DMN2020LSN
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
-
-
-
-
-
-
1.0
±10
V
μ A
μ A
V GS = 0V, I D = 250 μ A
V DS = 20V, V GS = 0V
V GS = ±12V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
0.5
-
-
-
1.0
13
18
16
0.7
1.5
20
28
-
1.2
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 4.5V, I D = 9.4A
V GS = 2.5V, I D = 8.3A
V DS = 5V, I D = 9.4A
V GS = 0V, I S = 1.3A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
1149
157
142
1.51
11.6
2.7
3.4
11.67
12.49
35.89
12.33
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V DS = 10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 4.5V, V DS = 10V,
I D = 9.4A
V DD = 10V, V GS = 4.5V,
R GEN = 6 ? , I D = 1A
Notes:
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
20
V GS = 8.0V
V GS = 4.5V
20
15
V GS = 3.0V
15
V DS = 10V
V GS = 2.5V
V GS = 2.0V
10
10
T A = 150°C
5
5
T A = 125°C
V GS = 1.8V
T A = 85°C
T A = 25°C
0
V GS = 1.5V
0
T A = -55°C
0
0.5 1 1.5
2
0
0.5 1 1.5 2 2.5
3
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DMN2020LSN
Document number: DS31946 Rev. 3 - 2
2 of 6
www.diodes.com
August 2011
? Diodes Incorporated
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