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参数资料
| 型号： | DMN2019UTS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 20V 5.4A TSSOP-8 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 18.5 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 950mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.8nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 143pF @ 10V |
| 功率 - 最大： | 780mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 标准包装 |
| 其它名称： | DMN2019UTS-13DIDKR |
DMN2019UTS
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V (BR)DSS
20V
R DS(ON) max
18.5m ? @ V GS = 10V
21m ? @ V GS = 4.5V
24m ? @ V GS = 2.5V
31m ? @ V GS = 1.8V
I D max
T A = 25°C
5.4 A
5.0 A
4.6 A
3.5 A
?
?
?
?
?
?
?
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected up to 2KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
? Case: TSSOP-8
? Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
? Power management functions
? Load Switch
TSSOP-8
?
?
?
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.039 grams (approximate)
D
D
1
D
D
8
2
3
4
S1
S1
G1
S2
S2
G2
7
6
5
G1
G2
S1
S2
ESD PROTECTED TO 2kV
Top View
Bottom View
Top View
Pin Configuration
N-Channel N-Channel
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN2019UTS-13
Case
TSSOP-8
Packaging
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
8
5
Logo
N2019U
YY WW
Part no
Xth week : 01~53
Year: “12” = 2012
1
4
Top View
DMN2019UTS
Document number: DS35556 Rev. 2 - 2
1 of 6
www.diodes.com
December 2012
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2020LSN | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2020LSN-7 | 功能描述:MOSFET MOSFET,N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2023LSD-13 | 功能描述:MOSFET NMOS-DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2027LK3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2027LK3-13 | 功能描述:MOSFET ENHANCE MODE MOSFET 20V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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