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参数资料
| 型号： | DMN2013UFDE-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSF N CH 20V 10.5A U-DFN2020-6 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11 毫欧 @ 8.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25.8nC @ 8V |
| 输入电容 (Ciss) @ Vds： | 2453pF @ 10V |
| 功率 - 最大： | 660mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UDFN |
| 供应商设备封装： | * |
| 包装： | 标准包装 |
| 其它名称： | DMN2013UFDE-7DIDKR |
DMN2013UFDE
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
PCB footprint of 4mm
V (BR)DSS
20V
R DS(ON) MAX
11m ? @ V GS = 4.5V
13m ? @ V GS = 2.5V
30m ? @ V GS = 1.8V
50m ? @ V GS = 1.5V
Package
U-DFN2020-6
U-DFN2020-6
U-DFN2020-6
U-DFN2020-6
I D
T A = +25°C
10.5A
9.4A
6.5A
5.5A
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0.6mm profile – ideal for low profile applications
2
Low Gate Threshold Voltage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
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PPAP Capable (Note 4) ?
This new generation MOSFET has been designed to minimize the on-
Mechanical Data
state resistance (R DS(ON) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
Flammability Classification Rating 94V-0
UL
Applications
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Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
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General Purpose Interfacing Switch
Power Management Functions
?
per MIL-STD-202, Method 208 e4
Weight: 0.0065 grams (approximate)
Drain
U-DFN2020-6
Gate
ESD PROTECTED
Gate
Protection
Diode
Source
Bottom View
Ordering Information (Note 5)
Pin Out
Equivalent Circuit
Part Number
DMN2013UFDE-7
DMN2013UFDEQ-7
DMN2013UFDE-13
DMN2013UFDEQ-13
Compliance
Standard
Automotive
Standard
Automotive
Case
U-DFN2020-6
U-DFN2020-6
U-DFN2020-6
U-DFN2020-6
Quantity per reel
3,000
3,000
10,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
N6
N6 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
1 of 6
www.diodes.com
April 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN2015UFDE-7 | MOSF N CH 20V 10.5A U-DFN2020-6E |
| DMN2016LFG-7 | MOSFET N CH DUAL 20V 5.2A |
| DMN2016UTS-13 | MOSFET N-CH 20V 8.58A 8-TSSOP |
| DMN2019UTS-13 | MOSFET 2N-CH 20V 5.4A TSSOP-8 |
| DMN2020LSN-7 | MOSFET N-CH 20V 6.9A SC59 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2015UFDE | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2015UFDE-13 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2015UFDE-7 | 功能描述:MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2016LFG-7 | 功能描述:MOSFET MOSFET N-CHANNEL DFN DFN3030-8 GREEN 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2016LHAB-7 | 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 8V-24V U-DFN2030-6 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSF N CH DL 20V 7.5A UDFN20306 制造商:Diodes Incorporated 功能描述:Dual MOSFET N-channel 20V 7.5A DFN2030-6 |
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