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| 型号： | DMN26D0UDJ-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 20V 230MA SOT963 |
| 产品目录绘图： | Dual N Channel SOT 963 Package |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 230mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3 欧姆 @ 100mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 14.1pF @ 15V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-963 |
| 供应商设备封装： | SOT-963 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN26D0UDJ-7DIDKR |
DMN26D0UDJ
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
± 10
Unit
V
V
Continuous Drain Current (Note 6) V GS = 4.5V
Continuous Drain Current (Note 6) V GS = 1.8V
Pulsed Drain Current - T P = 10μs
Steady
State
Steady
State
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I DM
240
190
180
140
805
mA
mA
mA
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
300
409
-55 to +150
Unit
mW
° C/W
° C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
20
?
?
V
V GS = 0V, I D = 100 μ A
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ T C = +25°C
I DSS
I GSS
?
?
?
?
500
± 1
± 100
nA
μ A
nA
V DS = 20V, V GS = 0V
V GS = ±10V, V DS = 0V
V GS = ±5V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
0.45
0.8
1.05
V
V DS = V GS , I D = 250 μ A
?
?
1.8
2.5
3.0
4.0
V GS = 4.5V, I D = 100mA
V GS = 2.5V, I D = 50mA
Static Drain-Source On-Resistance
R DS (ON)
?
3.4
6.0
Ω
V GS = 1.8V, I D = 20mA
?
?
4.7
9.5
10.0
?
V GS = 1.5V, I D = 10mA
V GS = 1.2V, I D = 1mA
Forward Transconductance
Source-Drain Diode Forward Voltage
|Y fs |
V SD
180
0.5
240
0.8
?
1.0
mS
V
V DS =10V, I D = 0.1A
V GS = 0V, I S = 10mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
14.1
2.9
1.6
?
?
?
pF
pF
pF
V DS = 15V, V GS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS, V GS = 4.5V (Note 8)
Turn-On Delay Time
t d(on)
?
3.8
?
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
?
?
?
7.9
13.4
15.2
?
?
?
ns
V GS = 4.5V, V DD = 10V
I D = 200mA, R G = 2.0 ?
Notes:
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch with minimum recommended pad layout; pad layout as shown on Diodes Inc. suggested
pad layout document AP02001, which can be found on our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
8. Switching characteristics are independent of operating junction temperature. Guaranteed by design, not subject to production testing.
DMN26D0UDJ
Document number: DS31481 Rev. 7 - 2
2 of 5
www.diodes.com
December 2012
? Diodes Incorporated
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| DMN26D0UFB4 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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| DMN26D0UFB4-7 | 功能描述:MOSFET ENHANCE MODE MOSFET 20V N-Chan RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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