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参数资料
| 型号： | DMN26D0UFB4-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 230MA DFN |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 230mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3 欧姆 @ 100mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 14.1pF @ 15V |
| 功率 - 最大： | 350mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | 3-DFN1006H4（1.0x0.6） |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN26D0UFB4-7DIDKR |
DMN26D0UFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
R DS(on)
I D
T A = 25°C
?
?
N-Channel MOSFET
Low On-Resistance:
? 3.0 Ω @ 4.5V
20V
3.0 Ω @ V GS = 4.5V
6.0 Ω @ V GS = 1.8V
240mA
170mA
?
?
?
4.0 Ω @ 2.5V
6.0 Ω @ 1.8V
10 Ω @ 1.5V
?
Very Low Gate Threshold Voltage, 1.05V max
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
? DC-DC Converters
? Power management functions
?
?
?
?
?
?
?
?
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package, 0.4mm Maximum Package
Height
ESD Protected Gate
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
?
?
?
?
?
?
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Drain
X2-DFN1006-3
Body
Diode
Gate
S
Gate
D
Protection
Diode
Source
G
ESD PROTECTED
Bottom View
Equivalent Circuit
Top View
Ordering Information (Note 3)
Notes:
Part Number
DMN26D0UFB4-7
DMN26D0UFB4-7B
1. No purposefully added lead.
Case
X2-DFN1006-3
X2-DFN1006-3
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN26D0UFB4-7
DMN26D0UFB4-7B
M1
Top View
Dot Denotes Drain Side
DMN26D0UFB4
Document number: DS31775 Rev. 7 - 2
M1
Top View
Bar Denotes Gate
and Source Side
1 of 6
www.diodes.com
M1 = Product Type Marking Code
March 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN26D0UT-7 | MOSFET N-CH 20V 230MA SOT523 |
| DMN2990UDJ-7 | MOSFET DL NCH 20V 450MA SOT-963 |
| DMN2990UFA-7B | MOSFET N CH 20V 510MA |
| DMN3005LK3-13 | MOSFET N-CH 30V 14.5A TO252-3L |
| DMN3007LSS-13 | MOSFET N-CH 30V 16A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN26D0UFB4-7B | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN26D0UT | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN26D0UT-7 | 功能描述:MOSFET N-Ch -20V VDSS 230mA 300mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN26DOUT-7 | 制造商:Diodes Incorporated 功能描述:MOSFET N-CHANNEL SOT-523 GREEN 3K |
| DMN2990UDJ | 制造商:Diodes Incorporated 功能描述:MOSFET NN CH W ESD 20V SOT963 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W ESD, 20V, SOT963 |
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