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| 型号： | DMN26D0UFB4-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 230MA DFN |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 230mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3 欧姆 @ 100mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 14.1pF @ 15V |
| 功率 - 最大： | 350mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | 3-DFN1006H4（1.0x0.6） |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN26D0UFB4-7DIDKR |
DMN26D0UFB4
Maximum Ratings @T A = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
± 10
Unit
V
V
Continuous Drain Current (Note 4) V GS = 4.5V
Continuous Drain Current (Note 4) V GS = 1.8V
Pulsed Drain Current - T P = 10μs
Steady
State
Steady
State
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I DM
240
190
180
140
805
mA
mA
mA
Thermal Characteristics
@T A = 25°C unless otherwise specified
Total Power Dissipation (Note 4) @T A = 25°C
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
P D
R θ JA
T J , T STG
350
357
-55 to +150
mW
° C/W
° C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ T C = 25°C
Gate-Body Leakage
BV DSS
I DSS
I GSS
20
?
?
?
?
?
?
500
± 1
± 100
V
nA
μ A
nA
V GS = 0V, I D = 100 μ A
V DS = 20V, V GS = 0V
V GS = ±10V, V DS = 0V
V GS = ±5V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
0.45
?
?
?
?
180
0.5
?
1.8
2.5
3.4
4.7
242
?
1.05
3.0
4.0
6.0
10.0
?
1.4
V
Ω
mS
V
V DS = V GS , I D = 250 μ A
V GS = 4.5V, I D = 100mA
V GS = 2.5V, I D = 50mA
V GS = 1.8V, I D = 20mA
V GS = 1.5V, I D = 10mA
V DS = 10V, I D = 0.1A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
14.1
2.9
1.6
?
?
?
pF
pF
pF
V DS = 15V, V GS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t d(on)
?
3.8
?
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
?
?
?
7.9
13.4
15.2
?
?
?
ns
V GS = 4.5V, V DD = 10V
I D = 200mA, R G = 2.0 ?
Notes:
4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Short duration pulse test used to minimize self-heating effect.
DMN26D0UFB4
Document number: DS31775 Rev. 7 - 2
2 of 6
www.diodes.com
March 2012
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN26D0UFB4-7B | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN26D0UT | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN26D0UT-7 | 功能描述:MOSFET N-Ch -20V VDSS 230mA 300mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN26DOUT-7 | 制造商:Diodes Incorporated 功能描述:MOSFET N-CHANNEL SOT-523 GREEN 3K |
| DMN2990UDJ | 制造商:Diodes Incorporated 功能描述:MOSFET NN CH W ESD 20V SOT963 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W ESD, 20V, SOT963 |
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