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参数资料
| 型号： | DMN3005LK3-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 14.5A TO252-3L |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 14.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 46.9nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 4342pF @ 15V |
| 功率 - 最大： | 1.68W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 其它名称： | DMN3005LK3-13DIDKR |
NOT RECOMMENDED FOR
NEW DESIGN
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
DMN3005LK3
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±20
Unit
V
V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note6) V GS = 10V
Pulsed Drain Current (Note 7)
Steady
State
Steady
State
T A = +25°C
T A = +85°C
T A = +25°C
T A = +85°C
I D
I D
I DM
14.5
10.5
22
16
48
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T A = +25°C (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @T A = +25°C (Note 6)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
P D
R θ JA
T J , T STG
Value
1.68
74.3
4.1
30.8
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
1.0
±100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS(ON)
|Y fs |
V SD
1.0
-
-
-
1.5
2.5
3.8
22
0.8
2.0
4.5
6.5
-
1.0
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 20A
V GS = 4.5V, I D = 20A
V DS = 15V, I D = 15A
V GS = 0V, I S = 20A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
t rr
Q rr
-
-
-
-
-
-
-
-
-
-
-
-
-
4342
1801
669
1.76
46.9
14.3
18.6
7.9
22.8
73.4
43.5
23.5
15.6
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
?
nC
nC
nC
ns
ns
ns
ns
ns
nC
V DS = 15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 4.5V, V DS = 15V,
I D = 15A
V DS = 15V, V GS = 10V,
R L = 1.3 ? R G = 3 ?
I F = 20A, dl/dt = 100A/ ? s
I F = 20A, dl/dt = 100A/ ? s
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
6. Device mounted on 2” x 2” FR-4 PCB with high coverage 2oz. copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature and current limited by package.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMN3005LK3
Document number: DS33318 Rev. 4 - 3
2 of 6
www.diodes.com
May 2013
? Diodes Incorporated
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