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| 型号： | DMN3018SSS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 30V 7.3A SO-8 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 21 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 2.1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 697pF @ 15V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | DMN3018SSS-13DIDKR |
DMN3018SSS
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±25
Units
V
V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 5) V GS = 4.5V
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
Maximum Body Diode continuous Current
Steady
State
t<10s
Steady
State
t<10s
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 70 ° C
I D
I D
I D
I D
I DM
I S
7.3
5.7
9.7
7.8
5.5
4.3
7.6
5.8
60
2.5
A
A
A
A
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
T A = 25°C
T A = 70°C
Steady state
t<10s
T A = 25°C
T A = 70°C
Steady state
t<10s
P D
R θ JA
P D
R θ JA
R θ JC
T J, T STG
1.4
0.9
90
50
1.7
1.1
75
42
7.6
-55 to +150
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
1
±10
V
μ A
μ A
V GS = 0V, I D = 250 μ A
V DS = 24V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1
-
-
-
0.5
1.7
15
20
8.3
-
2.1
21
35
-
1.2
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 10A
V GS = 4.5V, I D = 8.5A
V DS = 5V, I D = 6.9A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (V GS = 4.5V)
Total Gate Charge (V GS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
T rr
Q rr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
697
97
67
1.47
6.0
13.2
2.2
1.8
4.3
4.4
20.1
4.1
7.3
7.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
V DS = 15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V GS = 10V, V DS = 15V,
I D = 9A
V DD = 15V, V GS = 10V,
R L = 15 ? ,I D = 1A, R G = 6 ?
I F = 9A, di/dt = 500A/ μ s
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN3018SSS
Document number: DS35501 Rev. 5 - 2
2 of 6
www.diodes.com
February 2012
? Diodes Incorporated
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