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| 型号： | DMN3024LSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 30V 5.7A SO8 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 608pF @ 15V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN3024LSD-13DIDKR |
A Product Line of
Diodes Incorporated
DMN3024LSD
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source voltage
Gate-Source voltage
Characteristic
(Notes 3 & 5)
Symbol
V DSS
V GS
Value
30
± 20
7.2
Unit
V
V
Continuous Drain current
V GS = 10V
T A = 70°C (Notes 3 & 5)
(Notes 2 & 5)
I D
5.8
5.7
A
(Notes 2 & 6)
6.8
Pulsed Drain current
V GS = 10V
(Notes 4 & 5)
I DM
34
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Notes 3 & 5)
(Notes 4 & 5)
I S
I SM
3.3
34
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
(Notes 2 & 5)
Symbol
Value
1.3
10.0
Unit
Power dissipation
Linear derating factor
(Notes 2 & 6)
P D
1.8
14.3
W
mW/ ° C
(Notes 3 & 5)
(Notes 2 & 5)
2.0
15.9
100
Thermal Resistance, Junction to Ambient
(Notes 2 & 6)
R θ JA
70
° C/W
(Notes 3 & 5)
63
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Notes 5 & 7)
R θ JL
T J , T STG
53
-55 to 150
° C/W
° C
Notes:
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 μs. The pulse current is limited by the maximum junction temperature.
5. For a dual device with one active die.
6. For a device with two active die running at equal power.
7. Thermal resistance from junction to solder-point (at the end of the drain lead): the device is operating in a steady-state condition.
DMN3024LSD
Document Revision: 3
2 of 8
www.diodes.com
July 2009
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN3024LSS-13 | MOSFET N-CH 30V 6.4A SO8 |
| DMN3024SFG-7 | MOSFET N-CH 30V 7.5A PWRDI3333-8 |
| DMN3029LFG-7 | MOSFET N-CH 30V 5.3A PWRDI333-8 |
| DMN3030LSS-13 | MOSFET N-CH 30V 9A 8-SOIC |
| DMN3031LSS-13 | MOSFET N-CH 30V 9A 8SOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN3024LSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN3024LSS-13 | 功能描述:MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3024SFG | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN3024SFG-13 | 功能描述:MOSFET 30V N-Ch ENH Mode PowerDI 7.5A - 6.3A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3024SFG-7 | 功能描述:MOSFET MOSFET BVDSS: 25V-30 PowerD3333-8,2K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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