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| 型号： | DMN4031SSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET DL N-CH 40V 5.2A SO-8 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 31 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 945pF @ 20V |
| 功率 - 最大： | 1.42W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | DMN4031SSD-13DIDKR |
DMN4031SSD
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
40
±20
Units
V
V
Continuous Drain Current (Note 5)
Continuous Drain Current (Note 5)
Continuous Drain Current (Note 6)
Continuous Drain Current (Note 6)
V GS = 10V
V GS = 4.5V
V GS = 10V
V GS = 4.5V
Steady
State
Steady
State
Steady
State
Steady
State
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I D
I D
5.2
4.1
4.3
3.4
7.0
5.6
5.8
4.7
A
A
A
A
Pulsed Drain Current (Note 7)
I DM
20
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T A = +25°C (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @T A = +25°C (Note 6)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
P D
R θ JA
T J, T STG
Value
1.42
88
2.6
48
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
40
—
—
—
—
—
—
1
±100
V
μ A
nA
V GS = 0V, I D = 10mA
V DS = 40V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
On-state drain current
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
I D(ON)
R DS (ON)
|Y fs |
V SD
1.6
20
—
—
—
—
2.4
—
19
44
11
0.74
3.0
—
31
50
—
1.0
V
A
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, V DS = 5A
V GS = 10V, I D = 6A
V GS = 4.5V, I D = 5A
V DS = 5V, I D = 6A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (V GS = 4.5V)
Total Gate Charge (V GS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
T D(on)
T r
T D(off)
T f
—
—
—
—
—
—
—
—
—
—
—
—
945
69
58
1.45
8.4
18.6
3.3
2.2
6.4
9.7
19.8
3.1
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
?
nC
nC
nC
nC
ns
ns
ns
ns
V DS = 20V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V GS = 10V, V DS = 20V,
I D = 12A
V GS = 10V, V DS = 20V,
R L = 1.6 ? , R G = 3 ?
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout. The value in any given application depends on user’s specific board design
6. Device mounted on 1” x 1” FR-4PCB with high coverage 1 oz. Copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect
9. Guaranteed by design. No subject to production testing.
DMN4031SSD
Document number: DS35410 Rev. 4 - 2
2 of 6
www.diodes.com
February 2014
? Diodes Incorporated
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