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| 型号： | DMN4034SSS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 5.4A SO8 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 34 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 453pF @ 20V |
| 功率 - 最大： | 1.56W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 产品目录页面： | 1472 (CN2011-ZH PDF) |
| 其它名称： | DMN4034SSS-13DKR |
A Product Line of
Diodes Incorporated
DMN4034SSS
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source voltage
Characteristic
Symbol
V DSS
Value
40
Unit
V
Gate-Source voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
(Note 2)
(Note 7)
(Note 7)
V GS
E AS
I AS
± 20
27
15.25
V
mJ
A
(Note 4)
7.2
Continuous Drain current
V GS = 10V
T A = 70°C (Note 4)
I D
5.8
A
(Note 3)
5.4
Pulsed Drain current
V GS = 10V
(Note 5)
I DM
33.0
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 4)
(Note 5)
I S
I SM
4.1
33.0
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 6)
P D
R θ JA
R θ JL
T J , T STG
1.56
12.5
2.8
22.5
80
44.5
37
-55 to 150
W
mW/ ° C
° C/W
° C
Notes:
2. AEC-Q101 V GS maximum is ± 16V.
3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note (3), except the device is measured at t ≤ 10 sec.
5. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300μs. The pulse current is limited by the maximum junction temperature.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
7. UIS in production with L = 100μH, V DD = 40V.
DMN4034SSS
Document Number DS32106 Rev 2 - 2
2 of 9
www.diodes.com
January 2012
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN4036LK3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4036LK3_10 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4036LK3-13 | 功能描述:MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN4040SK3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4040SK3-13 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
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