- 您现在的位置：买卖IC网 > Datasheet目录406 > DMN4036LK3-13 (Diodes Inc)MOSFET N-CH 40V 8.5A DPAK Datasheet资料下载
参数资料
| 型号： | DMN4036LK3-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 8.5A DPAK |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 36 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 453pF @ 20V |
| 功率 - 最大： | 2.12W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN4036LK3-13DIDKR |
A Product Line of
Diodes Incorporated
DMN4036LK3
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source voltage
Characteristic
Symbol
V DSS
Value
40
Unit
V
Gate-Source voltage
(Note 2)
V GS
± 20
V
(Note 4)
12.2
Continuous Drain current
V GS = 10V
T A = 70 ° C (Note 4)
I D
9.7
A
(Note 3)
8.5
Pulsed Drain current
V GS = 10V
(Note 5)
I DM
31.7
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 4)
(Note 5)
I S
I SM
10.4
31.7
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
(Note 3)
Symbol
Value
4.12
33
Unit
Power dissipation
Linear derating factor
(Note 4)
P D
8.49
67.9
W
mW/ ° C
(Note 6)
(Note 3)
2.12
16.9
30.3
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 4)
(Note 6)
(Note 7)
R θ JA
R θ JL
T J , T STG
14.7
59.0
3.1
-55 to 150
° C/W
° C
Notes:
2. AEC-Q101 V GS maximum is ±16V.
3. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note 3, except the device is measured at t ≤ 10 sec.
5. Same as note 3, except the device is pulsed with D = 0.02 and pulse width 300 μs. The pulse current is limited by the maximum junction temperature.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMN4036LK3
Document number: DS32122 Rev. 2 - 2
2 of 8
www.diodes.com
March 2010
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN4060SVT-7 | MOSFET N-CH 45V 4.8A TSOT26 |
| DMN4800LSS-13 | MOSFET N-CH 30V 9A 8SOP |
| DMN4800LSSL-13 | MOSFET N-CH 30V 8A SO-8 |
| DMN5010VAK-7 | MOSFET DUAL N-CH 50V SOT-563 |
| DMN55D0UT-7 | MOSFET N-CH 50V 160MA SOT-523 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN4040SK3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4040SK3-13 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4060SVT-7 | 功能描述:MOSFET MOSFET BVDSS: 41V-60 1V-60V TSOT26 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN4468LSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4468LSS-13 | 功能描述:MOSFET N-CHAN ENHNCMNT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。