- 您现在的位置：买卖IC网 > Datasheet目录407 > DMN55D0UT-7 (Diodes Inc)MOSFET N-CH 50V 160MA SOT-523 Datasheet资料下载
参数资料
| 型号： | DMN55D0UT-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 50V 160MA SOT-523 |
| 产品目录绘图： | SOT-523 Package Top SOT-523 Package Side 1 SOT-523 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 160mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 欧姆 @ 100mA，4V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 25pF @ 10V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-523 |
| 供应商设备封装： | SOT-523 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN55D0UTDIDKR |
DMN55D0UT
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Continuous
Pulsed Drain Current (Note 5)
Symbol
V DSS
V GSS
I D
I DM
Value
50
± 12
160
560
Units
V
V
mA
mA
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
200
625
-55 to +150
Units
mW
° C/W
° C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV DSS
I DSS
I GSS
50
?
?
?
?
?
?
1
1.0
5.0
V
μ A
μ A
V GS = 0V, I D = 250 μ A
V DS = 50V, V GS = 0V
V GS = ± 8V, V DS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V GS(th)
R DS (ON)
g FS
0.7
?
?
180
0.8
3.1
4
?
1.0
4
5
?
V
Ω
mS
V DS = V GS , I D = 250 μ A
V GS = 4V, I D = 100mA
V GS = 2.5V, I D = 80mA
V DS = 10V, I D = 100mA, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
25
?
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
?
?
5
2.1
?
?
pF
pF
V DS = 10V, V GS = 0V, f = 1.0MHz
Notes:
5. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
DMN55D0UT
Document number: DS31330 Rev. 5 - 2
2 of 5
www.diodes.com
December 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN5L06-7 | MOSFET N-CH 50V 280MA SOT23-3 |
| DMN5L06DMK-7 | MOSFET DUAL N-CHAN 50V SOT-26 |
| DMN5L06DW-7 | MOSFET N-CHAN DUAL 200MW SOT-363 |
| DMN5L06DWK-7 | MOSFET DUAL N-CH 50V SOT-363 |
| DMN5L06K-7 | MOSFET N-CH 50V 300MA SOT23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN5L06 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN5L06DMK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06DMK_0709 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06DMK-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。