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| 型号： | DMN5L06WK-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 50V 300MA SC70-3 |
| 产品变化通告： | Copper Bond Wire Change 3/May/2011 |
| 其它图纸： | SOT-323 Package Top SOT-323 Package Side 1 SOT-323 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 300mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 欧姆 @ 50mA，5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SOT-323 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN5L06WKDIDKR |
DMN5L06WK
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Drain Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
50
? 20
Unit
V
V
Drain Current (Note 5)
Continuous
Pulsed (Note 6)
I D
300
800
mA
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
250
500
-65 to +150
Unit
mW
? C/W
? C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
50
?
?
V
V GS = 0V, I D = 10 μ A
Zero Gate Voltage Drain Current
Gate-Body Leakage
@T C = +25°C
I DSS
I GSS
?
?
?
?
60
1
500
50
nA
μ A
nA
nA
V DS = 50V, V GS = 0V
V GS = ±12V, V DS = 0V
V GS = ±10V, V DS = 0V
V GS = ±5V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
V GS(th)
R DS (ON)
I D(ON)
|Y fs |
V SD
0.49
??
??
?
0.5
200
0.5
?
??
??
?
1.4
?
?
1.0
3.0
2.5
2.0
?
?
1.4
V
?
A
mS
V
V DS = V GS , I D = 250 μ A
V GS = 1.8V, I D = 50mA
V GS = 2.5V, I D = 50mA
V GS = 5.0V, I D = 50mA
V GS = 10V, V DS = 7.5V
V DS =10V, I D = 0.2A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
?
?
?
2.1
1.8
14.4
8.4
50
25
5.0
?
?
?
?
pF
pF
pF
ns
ns
ns
ns
V DS = 25V, V GS = 0V
f = 1.0MHz
V DD = 30V, V GS = 10V,
R G = 25 ? , I D = 200mA
Notes:
5.
6.
7.
8.
Device mounted on FR-4 PCB.
Pulse width ? 10 μ S, Duty Cycle ? 1%.
Short duration pulse test used to minimize self-heating effect.
Guaranteed by design. Not subject to production testing.
DMN5L06WK
Document number: DS30928 Rev. 8 - 2
2 of 6
www.diodes.com
March 2014
? Diodes Incorporated
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