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| 型号： | DMP2305U-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 4.2A SOT-23 |
| 产品目录绘图： | SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 4.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 900mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 727pF @ 20V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMP2305UDIDKR |
DMP2305U
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±8
Units
V
V
Continuous Drain Current (Note 6)
Pulsed Drain Current (Note 7)
Steady
State
T A = +25°C
T A = +70°C
I D
I DM
-4.2
-3.4
-10
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @T A = 25°C
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
1.4
90
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV DSS
-20
?
?
V
V GS = 0V, I D = -250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
T J = +25°C
I DSS
I GSS
?
?
?
?
-1.0
±100
μ A
nA
V DS = -20V, V GS = 0V
V GS = ? 8V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V GS(th)
-0.5
-
-0.9
V
V DS = V GS , I D = -250 μ A
45
60
V GS = -4.5V, I D = -4.2A
Static Drain-Source On-Resistance
R DS (ON)
?
60
90
m ?
V GS = -2.5V, I D = -3.4A
87
113
V GS = -1.8V, I D = -2.0A
Forward Transfer Admittance
|Y fs |
?
9
?
S
V DS = -5V, I D = -4A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C iss
C oss
C rss
R G
?
?
?
?
727
69
64
23
?
?
?
?
pF
pF
pF
?
V DS = -20V, V GS = 0V
f = 1.0MHz
V GS = 0V, V DS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Q g
?
7.6
?
nC
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
1.4
1.2
14.0
13.0
53.8
23.2
?
?
?
?
?
?
nC
nC
ns
ns
ns
ns
V GS = -4.5V, V DS = -4V, I D = -3.5A
V DS = -4V, V GS = -4.5V,
R L = 4 ? , R G = 6 ? , I D = -1A
Notes:
6. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMP2305U
Document number: DS31737 Rev. 6 - 2
2 of 6
www.diodes.com
October 2013
? Diodes Incorporated
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