参数资料
型号: DMP3020LSS-13
厂商: Diodes Inc
文件页数: 1/6页
文件大小: 0K
描述: MOSFET P-CH 30V 12A 8-SOIC
产品目录绘图: DMN Series Top
DMN Series Side 1
DMN Series Side 2
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 12A
开态Rds(最大)@ Id, Vgs @ 25° C: 14 毫欧 @ 8A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 30.7nC @ 10V
输入电容 (Ciss) @ Vds: 1802pF @ 15V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 标准包装
产品目录页面: 1578 (CN2011-ZH PDF)
其它名称: DMP3020LSSDIDKR
DMP3020LSS
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V (BR)DSS
-30V
R DS(ON) max
14m ? @ V GS = 10V
25m ? @ V GS = 4.5V
I D max
T A = +25°C
-12.0A
-8.5A
?
?
?
?
?
?
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
?
Halogen and Antimony Free. “Green” Device (Note 3)
Description
?
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET has been designed to minimize the on-state
resistance (R DS(on) ) and yet maintain superior switching
Mechanical Data
performance, making it ideal for high efficiency power management
applications.
Applications
? Backlighting
? Power Management Functions
?
?
?
?
?
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
?
DC-DC Converters
?
Weight: 0.074g (approximate)
SO-8
S
S
S
D
D
D
G
D
Top View
G
Top View
D
S
Equivalent circuit
Internal Schematic
Ordering Information (Note 4)
Part Number
DMP3020LSS-13
Case
SO-8
Packaging
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
8
5
8
5
= Manufacturer’s Marking
P3020LS = Product Type Marking Code
P3020LS
YY WW
P3020LS
YY WW
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1
4
1
4
Chengdu A/T Site
Shanghai A/T Site
DMP3020LSS
Document number: DS31263 Rev. 11 - 2
1 of 6
www.diodes.com
October 2013
? Diodes Incorporated
相关PDF资料
PDF描述
DMP3030SN-7 MOSFET P-CH 30V 700MA SC59-3
DMP3035LSS-13 MOSFET P-CH 30V 12A 8-SOIC
DMP3056LDM-7 MOSFET P-CH 30V 4.3A SOT-26
DMP3056LSD-13 MOSFET P-CH 30V 6.9A 8-SOIC
DMP3056LSS-13 MOSFET P-CH 30V 7.1A 8-SOIC
相关代理商/技术参数
参数描述
DMP3025LK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3025LK3-13 功能描述:MOSFET P-CH 30V 10.6A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
DMP3028LFDE-13 功能描述:MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP3028LFDE-7 功能描述:MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP3030SN 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR