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| 型号： | DMP3056LDM-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 4.3A SOT-26 |
| 产品目录绘图： | SOT-26 Package Top SOT-26 Package Side 1 SOT-26 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 45 毫欧 @ 4.3A，10V |
| Id 时的 Vgs(th)（最大）： | 2.1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.8nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 722pF @ 25V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 |
| 供应商设备封装： | SOT-26 |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMP3056LDMDIDKR |
DMP3056LDM
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-30
± 20
Units
V
V
Continuous Drain Current (Note 6) V GS = 10V
Steady State
t < 10s
T A = +25 ° C
T A = +25 ° C
I D
I D
-4.3
-5.8
A
A
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
I S
I DM
-2.3
-13
A
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
T A = +25°C
Steady State
T A = +25°C
Steady State
P D
R θ JA
P D
R θ JA
R θ JC
T J, T STG
1.25
100
1.5
86
15.6
-55 to 150
W
°C/W
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
STATIC PARAMETERS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
-30
?
?
V
V GS = 0V, I D = -250 μ A
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
T J = +25 ° C
I DSS
I GSS
V GS(th)
R DS (ON)
g FS
V SD
?
?
-1.0
?
?
?
?
?
?
?
?
8
?
-1
± 100
± 800
-2.1
45
65
?
-1.2
μ A
nA
V
m Ω
S
V
V GS = 0V, V DS = -30V
V GS = ± 20V, V DS = 0V
V GS = ± 25V, V DS = 0V
V GS = V DS , I D = -250 μ A
V GS = -10V, I D = -5A
V GS = -4.5V, I D = -4.2A
V DS = -10V, I D = -4.3A
V GS = 0V, I S = -1.7A
DYNAMIC PARAMETERS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
948
105
100
?
?
?
pF
pF
pF
V GS = 0V, V DS = -25V,
f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q G
Q G
Q GS
Q GD
R g
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
?
?
10.1
21.1
2.8
3.2
13.15
10.2
6.6
50.1
22.3
?
?
?
?
?
?
?
?
?
nC
nC
?
ns
V DS = -15V, V GS = -4.5V,
I D = -6A
V DS = -15V, V GS = -10V,
I D = -6A
V DS = 0V, V GS = 0V, f = 1MHz
V DS = -15V, V GS = -10V,
I D = -1A, R G = 6.0 Ω
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP3056LDM
Document number: DS31449 Rev. 11 - 2
2 of 6
www.diodes.com
December 2012
? Diodes Incorporated
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