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参数资料
| 型号： | DS1222 |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | BankSwitch Chip(存储器组切换芯片) |
| 中文描述： | SPECIALTY MICROPROCESSOR CIRCUIT, PDIP14 |
| 封装： | 0.300 INCH, DIP-14 |
| 文件页数： | 1/4页 |
| 文件大小： | 46K |
| 代理商： | DS1222 |
DS1222
BankSwitch Chip
DS1222
022698 1/4
FEATURES
Provides bank switching for 16 banks of memory
Bank switching is software-controlled by a pattern
recognition sequence on four address inputs
Automatically sets all 16 banks off on power-up
Bank switching logic allows only one bank on at a time
Custom recognition patterns are available to prevent
unauthorized access
Full +10% operating range
Low-power CMOS circuitry
Can be used to expand the address range of
microprocessors and decoders
Optional 16-pin SOIC surface mount package
DESCRIPTION
The DS1222 BankSwitch Chip is a CMOS circuit de-
signed to select one of sixteen memory banks under
software control. Memory bank switching allows for an
increase in memory capacity without additional address
lines. Continuous blocks of memory are enabled by se-
lecting the proper memory bank through a pattern rec-
ognition sequence on four address inputs. Custom pat-
terns available from Dallas Semiconductor can provide
security through uniqueness and prevent unauthorized
access. By combining the DS1222 with the DS1212
Nonvolatile Controller x16 Chip, up to 16 banks of static
RAMs can be selected.
PIN ASSIGNMENT
NC
PFI
AW
AX
AY
AZ
GND
NC
BS4
BS3
BS2
BS1
NC
Vcc
CEO
AW
AX
AY
AZ
GND
NC
BS3
BS2
BS1
Vcc
DS1222 14-Pin DIP
(300 Mil.)
See Mech. Drawings
Section
DS1222S16-Pin SOIC
(300 Mil.)
See Mech. Drawings
Section
PFI
CEO
CEI
CEI
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1
11
10
12
13
14
2
3
4
5
6
7
8
9
15
16
BS4
PIN DESCRIPTION
A
W
-A
Z
CEI
CEO
NC
BS1,BS2,
BS3,BS4
PFI
V
CC
GND
– Address Inputs
– Chip Enable Input
– Chip Enable Output
– No Connection
– Bank Select Outputs
– Bank Select Outputs
– Power Fail Input
– +5 Volts
– Ground
OPERATION – BANK SWITCHING
Initially, on power-up all four bank select outputs are low
and the chip enable output (CEO) is held high. (Note:
the power fail input [PFI] must be low prior to power-up
to assure proper initialization.) Bank switching is
achieved by matching a predefined pattern stored within
the DS1222 with a 16-bit sequence received on four ad-
dress inputs. Prior to entering the 16-bit pattern, which
sets the bank switch, a read cycle of 1111 on address in-
puts AW through AZ should be executed to guarantee
that pattern entry starts with bit 0. Each set of address
inputs is clocked into the DS1222 when CEI is driven
low. All 16 inputs must be consecutive read cycles. The
first eleven cycles must match the exact bit pattern as
相关PDF资料 |
PDF描述 |
|---|---|
| DS1225AB | 64K Nonvolatile SRAM(64K非易失性静态RAM) |
| DS1225AD | 16K Nonvolatile SRAM(64K非易失性SRAM) |
| DS1225Y | 64K Nonvolatile SRAM(64K 非易失性静态RAM) |
| DS1230AB(中文) | 256K NV SRAM(256K非易失性SRAM) |
| DS1230W | 3.3V 256K Nonvolatile SRAM(3.3V 256K 非易失性静态RAM) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1222+ | 功能描述:IC BANKSWITCH CMOS 14-DIP RoHS:是 类别:集成电路 (IC) >> 存储器 - 控制器 系列:- 标准包装:45 系列:- 控制器类型:静态 RAM（SRAM） 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
| DS1222N | 功能描述:IC BANKSWITCH CMOS IND 14-DIP RoHS:否 类别:集成电路 (IC) >> 存储器 - 控制器 系列:- 标准包装:45 系列:- 控制器类型:静态 RAM（SRAM） 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
| DS1222S | 功能描述:电源开关 IC - 配电 RoHS:否 制造商:Exar 输出端数量:1 开启电阻（最大值）:85 mOhms 开启时间（最大值）:400 us 关闭时间（最大值）:20 us 工作电源电压:3.2 V to 6.5 V 电源电流（最大值）: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5 |
| DS1222S+ | 功能描述:IC BANKSWITCH CMOS 16-SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 - 控制器 系列:- 标准包装:45 系列:- 控制器类型:静态 RAM（SRAM） 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
| DS1222SN | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
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