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参数资料
| 型号： | DS1225Y |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | DRAM |
| 英文描述： | 64K Nonvolatile SRAM(64K 非易失性静态RAM) |
| 中文描述： | 8K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP28 |
| 文件页数： | 1/8页 |
| 文件大小： | 84K |
| 代理商： | DS1225Y |
DS1225Y
64K Nonvolatile SRAM
DS1225Y
021998 1/8
FEATURES
10 years minimum data retention in the absence of
external power
Data is automatically protected during power loss
Directly replaces 8K x 8 volatile static RAM or EE-
PROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 28–pin DIP package
Read and write access times as fast as 150 ns
Full
±
10% operating range
Optional industrial temperature range of –40
°
C to
+85
°
C, designated IND
PIN ASSIGNMENT
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
VCC
NC
A8
A9
A11
A10
DQ7
DQ6
DQ5
DQ4
DQ3
WE
OE
CE
28–PIN ENCAPSULATED PACKAGE
720 MIL EXTENDED
PIN DESCRIPTION
A0–A12
DQ0–DQ7
CE
WE
OE
V
CC
GND
NC
– Address Inputs
– Data In/Data Out
– Chip Enable
– Write Enable
– Output Enable
– Power (+5V)
– Ground
– No Connect
DESCRIPTION
The DS1225Y 64K Nonvolatile SRAM is a 65,536–bit,
fully static, nonvolatile RAM organized as 8192 words
by 8 bits. Each NV SRAM has a self–contained lithium
energy source and control circuitry which constantly
monitors V
CC
for an out–of–tolerance condition. When
such a condition occurs, the lithium energy source is
automatically switched on and write protection is uncon-
ditionally enabled to prevent data corruption. The NV
SRAM can be used in place of existing 8K x 8 SRAMs
directly conforming to the popular bytewide 28–pin DIP
standard. The DS1225Y also matches the pinout of the
2764 EPROM or the 2864 EEPROM, allowing direct
substitution while enhancing performance. There is no
limit on the number of write cycles that can be executed
and no additional support circuitry is required for micro-
processor interfacing.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1230AB(中文) | 256K NV SRAM(256K非易失性SRAM) |
| DS1230W | 3.3V 256K Nonvolatile SRAM(3.3V 256K 非易失性静态RAM) |
| DS1230Y | 256K Nonvolatile SRAM(256K 非易失性静态RAM) |
| DS1230AB | 256K NV SRAM(256K非易失性SRAM) |
| DS1231 | Power Monitor Chip(电源监控芯片) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1225Y-150 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1225Y-150+ | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1225Y-150IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1225Y-150-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:64K Nonvolatile SRAM |
| DS1225Y-150IND+ | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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