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参数资料
| 型号： | DS1225Y |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | DRAM |
| 英文描述： | 64K Nonvolatile SRAM(64K 非易失性静态RAM) |
| 中文描述： | 8K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP28 |
| 文件页数： | 6/8页 |
| 文件大小： | 84K |
| 代理商： | DS1225Y |
DS1225Y
021998 6/8
POWER–DOWN/POWER–UP CONDITION
3.2V
DATA RETENTION TIME
CE
V
CC
t
F
t
PD
t
R
t
REC
t
DR
LEAKAGE CURRENT
I
SUPPLIED FROM
LITHIUM CELL
V
TP
SEE NOTE 11
POWER–DOWN/POWER–UP TIMING
PARAMETER
SYM
MIN
MAX
UNITS
NOTES
CE at V
IH
before Power–Down
t
PD
0
μ
s
11
V
CC
Slew from V
TP
to 0V
t
F
100
μ
s
V
CC
Slew from 0V to V
TP
t
R
0
μ
s
CE at V
IH
after Power–Up
t
REC
2
ms
(t
A
= 25
°
C)
NOTES
PARAMETER
SYM
MIN
MAX
UNITS
Expected Data Retention Time
t
DR
10
years
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery backup mode.
NOTES:
1. WE is high for a read cycle.
2. OE = V
IH
or V
IL
. If OE = V
IH
during a write cycle, the output buffers remain in a high impedance state.
3. t
WP
is specified as the logical AND of CE and WE. t
WP
is measured from the latter of CE or WE going low to the
earlier of CE or WE going high.
4. t
DS
is measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or later than the WE low transition in Write Cycle 1, the output
buffers remain in a high impedance state during this period.
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain
in a high impedance state during this period.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1225Y-150 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1225Y-150+ | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1225Y-150IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1225Y-150-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:64K Nonvolatile SRAM |
| DS1225Y-150IND+ | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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