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| 型号： | DS1258AB-70# |
| 厂商： | Maxim Integrated |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 2MBIT 70NS 40DIP |
| 标准包装： | 9 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 2M (128K x 16) |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 4.75 V ~ 5.25 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 40-DIP 模块（0.610"，15.495mm） |
| 供应商设备封装： | 40-EDIP |
| 包装： | 管件 |
DS1258Y/AB
128k x 16 Nonvolatile SRAM
www.maxim-ic.com
FEATURES
§ 10-Year Minimum Data Retention in the
Absence of External Power
§ Data is Automatically Protected During a
Power Loss
§ Separate Upper Byte and Lower Byte Chip-
Select Inputs
§ Unlimited Write Cycles
§ Low-Power CMOS
§ Read and Write Access Times as Fast as 70ns
§ Lithium Energy Source is Electrically
Disconnected to Retain Freshness Until
Power is Applied for the First Time
PIN ASSIGNMENT
CEU 1
CEL 2
DQ15 3
DQ14 4
DQ13 5
DQ12 6
DQ11 7
DQ10 8
DQ9 9
DQ8 10
GND 11
DQ7 12
DQ6 13
DQ5 14
40
39
38
37
36
35
34
33
32
31
30
29
28
27
V CC
WE
A16
A15
A14
A13
A12
A11
A10
A9
GND
A8
A7
A6
§
§
§
Full ± 10% Operating Range (DS1258Y)
Optional ± 5% Operating Range (DS1258AB)
Optional Industrial Temperature Range of
-40 ° C to +85 ° C, Designated IND
DQ4
DQ3
DQ2
DQ1
DQ0
OE
15
16
17
18
19
20
26
25
24
23
22
21
A5
A4
A3
A2
A1
A0
40-Pin Encapsulated Package
740mil Extended
PIN DESCRIPTION
A0 to A16
DQ0 to DQ15
CEU
CE L
W E
OE
V CC
GND
- Address Inputs
- Data In/Data Out
- Chip Enable Upper Byte
- Chip Enable Lower Byte
- Write Enable
- Output Enable
- Power (+5V)
- Ground
DESCRIPTION
The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as
131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry that constantly monitors V CC for an out-of-tolerance condition. When such a condition occurs,
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. DIP-package DS1258 devices can be used in place of solutions that build NV
128k x 16 memory by utilizing a variety of discrete components. There is no limit on the number of write
cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1258AB-70# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258AB-70IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258AB-70-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:128k x 16 Nonvolatile SRAM |
| DS1258AB-70IND# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258W | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
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