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参数资料
| 型号： | DS1258AB-70# |
| 厂商： | Maxim Integrated |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 2MBIT 70NS 40DIP |
| 标准包装： | 9 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 2M (128K x 16) |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 4.75 V ~ 5.25 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 40-DIP 模块（0.610"，15.495mm） |
| 供应商设备封装： | 40-EDIP |
| 包装： | 管件 |
DS1258Y/AB
READ MODE
The DS1258 devices execute a read cycle whenever WE (Write Enable) is inactive (high) and either/both
of CEU or CEL (Chip Enables) are active (low) and OE (Output Enable) is active (low). The unique
address specified by the 17 address inputs (A0-A16) defines which of the 131,072 words of data is
accessed. The status of CEU and CEL determines whether all or part of the addressed word is accessed. If
CEU is active with CEL inactive, then only the upper byte of the addressed word is accessed. If CEU is
inactive with CEL active, then only the lower byte of the addressed word is accessed. If both the CEU
and CEL inputs are active (low), then the entire 16-bit word is accessed. Valid data will be available to
the 16 data output drivers within t ACC (Access Time) after the last address input signal is stable, providing
that CEU , CEL and OE access times are also satisfied. If CEU , CEL , and OE access times are not
satisfied, then data access must be measured from the later occurring signal, and the limiting parameter is
either t CO for CEU , CEL , or t OE for OE rather than address access.
WRITE MODE
The DS1258 devices execute a write cycle whenever WE and either/both of CEU or CEL are active (low)
after address inputs are stable. The unique address specified by the 17 address inputs (A0-A16) defines
which of the 131,072 words of data is accessed. The status of CEU and CEL determines whether all or
part of the addressed word is accessed. If CEU is active with CEL inactive, then only the upper byte of
the addressed word is accessed. If CEU is inactive with CEL active, then only the lower byte of the
addressed word is accessed. If both the CEU and CEL inputs are active (low), then the entire 16-bit word
is accessed. The write cycle is terminated by the earlier rising edge of CEU and/or CEL , or WE . All
address inputs must be kept valid throughout the write cycle. WE must return to the high state for a
minimum recovery time (t WR ) before another cycle can be initiated. The OE control signal should be kept
inactive (high) during write cycles to avoid bus contention. However, if the output drivers are enabled
( CEU and/or CEL , and OE active) then WE will disable the outputs in t ODW from its falling edge.
READ/WRITE FUNCTION Table 1
OE
H
L
L
L
X
X
X
X
WE
H
H
H
H
L
L
L
X
CEL
X
L
L
H
L
L
H
H
CEU
X
L
H
L
L
H
L
H
V CC
CURRENT
I CCO
I CCO
I CCO
I CCS
DQ0-DQ7
High-Z
Output
Output
High-Z
Input
Input
High-Z
High-Z
DQ8-DQ15
High-Z
Output
High-Z
Output
Input
High-Z
Input
High-Z
CYCLE
PERFORMED
Output Disabled
Read Cycle
Write Cycle
Output Disabled
DATA RETENTION MODE
The DS1258AB provides full functional capability for V CC greater than 4.75V, and write protects by
4.5V. The DS1258Y provides full functional capability for V CC greater than 4.5V and write protects by
4.25V. Data is maintained in the absence of V CC without any additional support circuitry. The NV static
RAMs constantly monitor V CC . Should the supply voltage decay, the NV SRAMs automatically write
protect themselves, all inputs become “don’t care,” and all outputs become high impedance. As V CC falls
below approximately 3.0V, a power switching circuit connects the lithium energy source to RAM to
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1258AB-70# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258AB-70IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258AB-70-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:128k x 16 Nonvolatile SRAM |
| DS1258AB-70IND# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258W | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
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