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参数资料
| 型号： | DS1265Y |
| 厂商： | Maxim Integrated Products, Inc. |
| 英文描述： | 8M Nonvolatile SRAM(8M非易失性静态RAM) |
| 中文描述： | 8M非易失SRAM |
| 文件页数： | 3/8页 |
| 文件大小： | 65K |
| 代理商： | DS1265Y |
DS1265Y/AB
060598 3/8
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
–0.3V to +7.0V
0
°
C to 70
°
C; –40
°
C to +85
°
C for IND parts
–40
°
C to +70
°
C; –40
°
C to +85
°
C for IND parts
260
°
C for 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(t
A
: See Note 10)
UNITS
PARAMETER
SYMBOL
MIN
TYP
MAX
NOTES
DS1265AB Power Supply Voltage
V
CC
4.75
5.0
5.25
V
DS1265Y Power Supply Voltage
V
CC
4.5
5.0
5.5
V
Logic 1 Input Voltage
V
IH
2.2
V
CC
V
Logic 0 Input Voltage
V
IL
0
+0.8
V
(V
CC
=5V
±
5% for DS1265AB)
DC ELECTRICAL CHARACTERISTICS
(t
A
: See Note 10) (V
CC
=5V
±
10% for DS1265Y)
TYP
MAX
PARAMETER
SYMBOL
MIN
UNITS
NOTES
Input Leakage Current
I
IL
–2.0
+2.0
μ
A
I/O Leakage Current
I
IO
–2.0
+2.0
μ
A
Output Current @ 2.4V
I
OH
–1.0
mA
Output Current @ 0.4V
I
OL
2.0
mA
Standby Current CE=2.2V
I
CCS1
1.0
1.5
mA
Standby Current CE=V
CC
–0.5V
I
CCS2
100
150
μ
A
Operating Current
I
CCO1
85
mA
Write Protection Voltage
(DS1265AB)
V
TP
4.5
4.62
4.75
V
Write Protection Voltage
(DS1265Y)
V
TP
4.25
4.37
4.5
V
CAPACITANCE
(t
A
= 25
°
C)
NOTES
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Input Capacitance
C
IN
10
20
pF
Output Capacitance
C
I/O
10
20
pF
相关PDF资料 |
PDF描述 |
|---|---|
| DS1265Y | 8M Nonvolatile SRAM |
| DS1270AB | 16M Nonvolatile SRAM(16M非易失性静态RAM) |
| DS1270Y | 16M Nonvolatile SRAM(16M非易失性静态RAM) |
| DS1270W | 3.3V 16Mb Nonvolatile SRAM |
| DS1302 | Trickle Charge Timekeeping Chip |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1265Y/AB | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:8M Nonvolatile SRAM |
| DS1265Y-100 | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1265Y-100+ | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1265Y-100-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1265Y-70 | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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