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参数资料
| 型号： | DS1265Y |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | DRAM |
| 英文描述： | 8M Nonvolatile SRAM |
| 中文描述： | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36 |
| 文件页数： | 6/8页 |
| 文件大小： | 160K |
| 代理商： | DS1265Y |
DS1265Y/AB
6 of 8
POWER-DOWN/POWER-UP CONDITION
SEE NOTE 11
POWER-DOWN/POWER-UP TIMING
(t
A
: See Note 10)
PARAMETER
SYMBOL
V
CC
Fail Detect to
CE
and
WE
Inactive
t
PD
V
CC
slew from V
TP
to 0V
t
F
V
CC
slew from 0V to V
TP
t
R
t
PU
V
CC
Valid to End of Write Protection
t
REC
MIN
TYP
MAX
1.5
UNITS
NOTES
11
s
150
150
s
s
V
CC
Valid to
CE
and
WE
Inactive
2
ms
125
ms
(t
A
=25 C)
PARAMETER
SYMBOL
Expected Data Retention Time
t
DR
MIN
10
TYP
MAX
UNITS
years
NOTES
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1.
WE
is high for a Read Cycle.
2.
OE
= V
IH
or V
IL
. If
OE
= V
IH
during write cycle, the output buffers remain in a high-impedance state.
3.
t
WP
is specified as the logical AND of
CE
or
WE
. t
WP
is measured from the latter of
CE
or
WE
going
low to the earlier of
CE
or
WE
going high.
4.
t
DS
is measured from the earlier of
CE
or
WE
going high.
5.
These parameters are sampled with a 5 pF load and are not 100% tested.
6.
If the
CE
low transition occurs simultaneously with or latter than the
WE
low transition, the output
buffers remain in a high-impedance state during this period.
7.
If the
CE
high transition occurs prior to or simultaneously with the
WE
high transition, the output
buffers remain in high-impedance state during this period.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1270AB | 16M Nonvolatile SRAM(16M非易失性静态RAM) |
| DS1270Y | 16M Nonvolatile SRAM(16M非易失性静态RAM) |
| DS1270W | 3.3V 16Mb Nonvolatile SRAM |
| DS1302 | Trickle Charge Timekeeping Chip |
| DS1305 | Serial Alarm Real Time Clock (RTC)(串行报警实时时钟（RTC）) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1265Y/AB | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:8M Nonvolatile SRAM |
| DS1265Y-100 | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1265Y-100+ | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1265Y-100-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1265Y-70 | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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