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参数资料
| 型号： | DS1963S |
| 厂商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分类： | Memory IC:Other |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, MEDB2 |
| 封装： | MICROCAN-2 |
| 文件页数： | 30/37页 |
| 文件大小： | 349K |
| 代理商： | DS1963S |
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DS1963S
36 of 37
NOTES
1) System requirement.
2) Maximum allowable pullup resistance is a function of the number of 1-Wire devices in the system
and 1-Wire recovery times. The specified value here applies to systems with only one device and
with the minimum 1-Wire recovery times. For more heavily loaded systems, an active pullup such
as that found in the DS2480 may be required.
3) Capacitance on the data pin could be 800pF when power is first applied. If a 2.2kW resistor is
used to pull up the data line to VPUP; the parasite capacitance will not affect normal
communications 2.5s after power has been applied.
4) Input load is to ground.
5) All voltages are referenced to ground.
6) VTL, VTH are a function of the internal supply voltage.
7) Voltage below which, during a falling edge on IO, a logic 0 is detected.
8) The voltage on IO needs to be less or equal to VILMAX whenever the master drives the line low.
9) Voltage above which, during a rising edge on IO, a logic 1 is detected.
10) The I-V characteristic is linear for voltages less than 1V.
11) e is the time required for the pullup circuitry to pull the voltage on IO up from VIL to VTH.
12) d represents the time required for the pullup circuitry to pull the voltage on IO up from VIL to the
input high threshold of the bus master.
13) The number of SHA-1 computations possible with the built-in energy source depends on the
operating and storage temperature of the device.
14) Highlighted numbers are not in compliance with the published iButton standards. See comparison
tables below.
15) The recovery time was intentionally increased from the standard value of 1s to a longer value to
improve the parasitic power supply of the device. This change improves the performance of the
chip and is not considered a non-compliance to the published standard.
Non-Compliance Table for TA = -40°C to +85°C
Standard Values
DS1963S Values
Parameter
Standard Speed
Overdrive Speed
Standard Speed
Overdrive Speed
Name
min
max
min
max
min
max
min
max
tSLOT (incl. tREC) 61s
(undef.)
7s
(undef.)
69s
(undef.)
8s
(undef.)
tRSTL
480s
(undef.)
48s
80s
540s
960s
48s
80s
tPDH
15s
60s
2s
6s
17s
60s
1.8s
6s
tPDL
60s
240s
8s
24s
78s
260s
7.7s
24s
tW0L
60s
120s
6s
16s
64s
120s
6s
15.4s
tSLS, tSPD
15s
60s
2s
6s
19s
64s
2s
4.8s
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1963S+F5 | 制造商:Maxim Integrated Products 功能描述:SHA IBTN 8SOIC - Rail/Tube |
| DS1963S-F5 | 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated |
| DS1963S-F5+ | 功能描述:iButton SHA iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated |
| DS1965S-1-F3 | 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated |
| DS1965S-1-F5 | 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated |
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