参数资料
型号: DS1963S
厂商: MAXIM INTEGRATED PRODUCTS INC
元件分类: Memory IC:Other
英文描述: SPECIALTY MEMORY CIRCUIT, MEDB2
封装: MICROCAN-2
文件页数: 36/37页
文件大小: 349K
代理商: DS1963S
DS1963S
8 of 37
DS1963S MEMORY MAP (continued) Figure 5
Counter Memory with User Read Access Only
Page #
Address Range
Description
19
0260h to 0263h
Counter 0 (Write Cycles to Page 8)
0264h to 0267h
Counter 1 (Write Cycles to Page 9)
0268h to 026Bh
Counter 2 (Write Cycles to Page 10)
026Ch to 026Fh
Counter 3 (Write Cycles to Page 11)
0270h to 0273h
Counter 4 (Write Cycles to Page 12)
0274h to 0277h
Counter 5 (Write Cycles to Page 13)
0278h to 027Bh
Counter 6 (Write Cycles to Page 14)
027Ch to 027Fh
Counter 7 (Write Cycles to Page 15)
20
0280h to 0283h
Write Cycle Counter Secret 0
0284h to 0287h
Write Cycle Counter Secret 1
0288h to 028Bh
Write Cycle Counter Secret 2
028Ch to 028Fh
Write Cycle Counter Secret 3
0290h to 0293h
Write Cycle Counter Secret 4
0294h to 0297h
Write Cycle Counter Secret 5
0298h to 029Bh
Write Cycle Counter Secret 6
029Ch to 029Fh
Write Cycle Counter Secret 7
21
02A0h to 02A3h
PRNG Counter
ADDRESS REGISTERS Figure 6
Target Address (TA1)
T7T6T5
T4T3T2T1T0
Target Address (TA2)
T15
T14
T13
T12
T11
T10
T9
T8
Ending Address with
Data Status (E/S)
(Read Only)
AA
0
PF
E4E3E2E1E0
WRITING WITH VERIFICATION
To write data to the DS1963S, the scratchpad has to be used as intermediate storage. First the master
issues the Write Scratchpad command to specify the desired target address, followed by the data to be
written to the scratchpad. Under certain conditions (see Write Scratchpad command) the master will
receive an inverted CRC16 of the command, address and data at the end of the write scratchpad command
sequence. Knowing this CRC value, the master can compare it to the value it has calculated itself to
decide if the communication was successful and proceed to the Copy Scratchpad command. If the master
could not receive the CRC16, it should send the Read Scratchpad command to verify data integrity. As
preamble to the scratchpad data, the DS1963S repeats the target address TA1 and TA2 and sends the
contents of the E/S register. If the PF flag is set, data did not arrive correctly in the scratchpad. The
master does not need to continue reading; it can start a new trial to write data to the scratchpad. Similarly,
a set AA flag indicates that the device did not recognize the Write command. If everything went
相关PDF资料
PDF描述
DS1985-F3 2K X 8 EEPROM 3V, RDB2
DS1986-F3 64K X 1 OTPROM, MEDB2
DS1986-F5 64K X 1 OTPROM, MADB2
DS1991L-F5 SPECIALTY MEMORY CIRCUIT, MEDB2
DS1994L-F5 SPECIALTY MEMORY CIRCUIT, MRDB2
相关代理商/技术参数
参数描述
DS1963S+F5 制造商:Maxim Integrated Products 功能描述:SHA IBTN 8SOIC - Rail/Tube
DS1963S-F5 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated
DS1963S-F5+ 功能描述:iButton SHA iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated
DS1965S-1-F3 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated
DS1965S-1-F5 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated