参数资料
型号: DS2776G+
厂商: Maxim Integrated Products
文件页数: 12/46页
文件大小: 0K
描述: IC FUEL GAUGE LI+ 2CELL 14-TDFN
产品培训模块: 1-Wire Communications
Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 60
功能: 燃料,电量检测计/监控器
电池化学: 锂离子(Li-Ion)、锂聚合物(Li-Pol)
电源电压: 4 V ~ 9.2 V
工作温度: -20°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 14-WFDFN 裸露焊盘
供应商设备封装: 14-TDFN-EP(3x5)
包装: 管件
产品目录页面: 1436 (CN2011-ZH PDF)
2-Cell, Stand-Alone, Li+ Fuel-Gauge IC with
Protector and Optional SHA-1 Authentication
ACTIVE
PMOD = 0
RISING EDGE ON DQ
SLEEP
PSPIO = 0
ACTIVE
PMOD = 0
UVEN = 0
RISING EDGE ON SDA OR SCL
SLEEP
PSPIO = 0
PSDQ = X
UVEN = 0
PSDQ = 0
CHARGER DETECT
CHARGER DETECT
V IN1 OR V IN2 < V UV
PULL DQ LOW
ACTIVE
PMOD = 0
V IN1 OR V IN2 < V UV
SLEEP
PSPIO = 0
ACTIVE
PMOD = 0
UVEN = 1
RISING EDGE ON SDA OR SCL
SLEEP
PSPIO = 0
PSDQ = X
UVEN = 1
PSDQ = 1
CHARGER DETECT
CHARGER DETECT
PULL PIO LOW
PULL PIO LOW
ACTIVE
PMOD = 1
PULL DQ LOW FOR t SLEEP
SLEEP
PSPIO = 1
ACTIVE
PMOD = 1
UVEN = 0
RISING EDGE ON SDA OR SCL
SLEEP
PSPIO = 1
PSDQ = X
UVEN = 0
PSDQ = 0
CHARGER DETECT
RISING EDGE ON DQ
PULL SDA AND SCL LOW
CHARGER DETECT
PULL PIO LOW
PULL DQ LOW FOR t SLEEP
FOR t SLEEP
V IN1 OR V IN2 < V UV
PULL PIO LOW
ACTIVE
PMOD = 1
UVEN = 1
V IN1 OR V IN2 < V UV
SLEEP
PSPIO = 1
PSDQ = 1
ACTIVE
PMOD = 1
UVEN = 1
RISING EDGE ON SDA OR SCL
SLEEP
PSPIO = 1
PSDQ = X
PULL DQ LOW
CHARGER DETECT
Figure 1. Sleep-Mode State Diagram for DS2775/DS2776
Li+ Protection Circuitry
During active mode, the DS2775–DS2778 constantly
monitor SNS, V IN1 , V IN2 , and PLS to protect the battery
from overvoltage (overcharge), undervoltage (overdis-
charge), and excessive charge and discharge currents
(overcurrent, short circuit). Table 1 summarizes the
conditions that activate the protection circuit, the
response of the DS2775–DS2778, and the thresholds
that release the DS2775 –DS2778 from a protection
state. Figure 3 shows Li+ protection circuitry example
waveforms.
CHARGER DETECT
PULL SDA AND SCL LOW
FOR t SLEEP
Figure 2. Sleep-Mode State Diagram for DS2777/DS2778
Overvoltage (OV)
If either of the voltages on (V IN2 - V IN1 ) or (V IN1 - V SS )
exceeds the overvoltage threshold, V OV , for a period
longer than overvoltage delay, t OVD , the CC pin is dri-
ven low to shut off the external charge FET. The DC out-
put remains high during overvoltage to allow
discharging. When (V IN2 - V IN1 ) and (V IN1 - V SS ) falls
below the charge-enable threshold, V CE , the
DS2775–DS2778 turn the charge FET on by driving CC
high. The DS2775 –DS2778 drive CC high before
[(V IN2 - V IN1 ) and (V IN1 - V SS )] < V CE if a discharge
condition persists with V SNS ≥ 1.2mV and [(V IN2 - V IN1 )
and (V IN1 - V SS )] < V OV .
12
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