参数资料
型号: DS2776G+
厂商: Maxim Integrated Products
文件页数: 14/46页
文件大小: 0K
描述: IC FUEL GAUGE LI+ 2CELL 14-TDFN
产品培训模块: 1-Wire Communications
Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 60
功能: 燃料,电量检测计/监控器
电池化学: 锂离子(Li-Ion)、锂聚合物(Li-Pol)
电源电压: 4 V ~ 9.2 V
工作温度: -20°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 14-WFDFN 裸露焊盘
供应商设备封装: 14-TDFN-EP(3x5)
包装: 管件
产品目录页面: 1436 (CN2011-ZH PDF)
2-Cell, Stand-Alone, Li+ Fuel-Gauge IC with
Protector and Optional SHA-1 Authentication
Undervoltage (UV)
If the average of the voltages on (V IN2 - V IN1 ) or
(V IN1 - V SS ) drops below the undervoltage threshold,
V UV , for a period longer than undervoltage delay, t UVD ,
the DS2775–DS2778 shut off the charge and discharge
FETs. If UVEN is set, the DS2775–DS2778 also enter
sleep mode. When a charger is detected and V PLS >
V IN2 , the DS2775–DS2778 provide a current-limited
recovery charge path (I RC ) from PLS to V DD to gently
charge severely depleted cells. The recovery charge
path is enabled when 0 ≤ [(V IN2 - V IN1 ) and (V IN1 -
V SS )] < V CE . The FETs remain off until (V IN2 - V IN1 ) and
(V IN1 - V SS ) exceed V UV .
Overcurrent, Charge Direction (COC)
Charge current develops a negative voltage on V SNS
with respect to V SS . If V SNS is less than the charge
overcurrent threshold, V COC , for a period longer than
overcurrent delay, t OCD , the DS2775–DS2778 shut off
both external FETs. The charge current path is not re-
established until the voltage on the PLS pin drops
below (V DD - V TP ). The DS2775–DS2778 provide a test
current of value I PPD from PLS to V SS , pulling PLS
down, in order to detect the removal of the offending
charge current source.
Overcurrent, Discharge Direction (DOC)
Discharge current develops a positive voltage on V SNS
with respect to V SS . If V SNS exceeds the discharge
overcurrent threshold, V DOC , for a period longer than
t OCD , the DS2775–DS2778 shut off the external dis-
charge FET. The discharge current path is not reestab-
lished until the voltage on PLS rises above (V DD - V TP ).
MSB - ADDRESS 0Ch, V IN1 - V SS
MSB - ADDRESS 1Ch, V IN2 - V IN1
The DS2775–DS2778 provide a test current of value
I TST from V DD to PLS, pulling PLS up, in order to detect
the removal of the offending low-impedance load.
Short Circuit (SC)
If V SNS exceeds short-circuit threshold, V SC , for a
period longer than short-circuit delay, t SCD , the
DS2775–DS2778 shut off the external discharge FET.
The discharge current path is not reestablished until
the voltage on PLS rises above (V DD - V TP ). The
DS2775–DS2778 provide a test current of value I TST
from V DD to PLS, pulling PLS up, in order to detect the
removal of the short circuit.
All the protection conditions described are logic
ANDed to affect the CC and DC outputs.
CC = ( overvoltage ) AND ( undervoltage ) AND
( overcurrent , charge direction) AND (Protection register
bit CE = 0)
DC = ( undervoltage ) AND ( overcurrent , either direction)
AND ( short circuit ) AND (Protection register bit
DE = 0)
Voltage Measurements
Cell voltages are measured every 440ms. The lowest
potential cell, V IN1 , is measured with respect to V SS .
The highest potential cell, V IN2 , is measured with
respect to V IN1 . Battery voltages are measured with a
range of -5V to +4.9951V and a resolution of 4.8828mV
and placed in the Result register in two’s complement
form. Voltages above the maximum register value are
reported as 7FE0h.
LSB - ADDRESS 0Dh, V IN1 - V SS
LSB - ADDRESS 1Dh, V IN2 - V IN1
S
2 9
2 8
2 7
2 6
2 5
2 4
2 3
2 2
2 1
2 0
X
X
X
X
X
MSb
“S ”: SIGN BIT(S), “X”: RESERVED
LSb
MSb
UNITS: 4.883mV
LSb
Figure 4. Voltage Register Format
14
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