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| 型号： | E28F400BX-B60 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | ACTUATOR, SWITCH, ROUND, MOMENTARY; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:1000000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes |
| 中文描述： | 256K X 16 FLASH 12V PROM, 60 ns, PDSO56 |
| 封装： | 20 X 14 MM, TSOP-56 |
| 文件页数： | 28/50页 |
| 文件大小： | 449K |
| 代理商： | E28F400BX-B60 |
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28F400BX-TB 28F004BX-TB
DC CHARACTERISTICS EXTENDED TEMPERATURE OPERATION (Continued)
Symbol
Parameter
Notes
Min
Typ Max Unit
Test Conditions
VOH2
Output High Voltage (CMOS)
085 VCC
VVCC e VCC Min
IOH eb25 mA
VCC b 04
VCC e VCC Min
IOH eb100 mA
VPPL
VPP during Normal Operations
3
00
65
V
VPPH
VPP during EraseWrite Operations
7
114
120 126
V
VPPH
VPP during EraseWrite Operations
8
108
120 132
V
VLKO
VCC EraseWrite Lock Voltage
20
V
VHH
RP
Unlock Voltage
115
130
V
Boot Block WriteErase
NOTES
1 All currents are in RMS unless otherwise noted Typical values at VCC e 50V VPP e 120V T e 25 C These currents
are valid for all product versions (packages and speeds)
2 ICCES is specified with the device deselected If the device is read while in Erase Suspend Mode current draw is the sum
of ICCES and ICCR
3 Block Erases and WordByte Writes are inhibited when VPP e VPPL and not guaranteed in the range between VPPH and
VPPL
4 Sampled not 100% tested
5 Automatic Power Savings (APS) reduces ICCR to less than 1 mA typical in static operation
6 CMOS Inputs are either VCC g02V or GND g02V TTL Inputs are either VIL or VIH
7 VPP e 120V g 5% for applications requiring 100000 block erase cycles
8 VPP e 120V g 10% for applications requiring wider VPP tolerances at 100 block erase cycles
9 For the 28F004BX address pin A10 follows the COUT capacitance numbers
10 ICCR typical is 20 mA for X16 Active Read Current
CAPACITANCE(1) TA e 25 C f e 1 MHz
Symbol
Parameter
Typ
Max
Unit
Conditions
CIN
Input Capacitance
6
8
pF
VIN e 0V
COUT
Output Capacitance
10
12
pF
VOUT e 0V
NOTE
1 Sampled not 100% tested
34
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| E28F400BX-B80 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T120 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F004BX-T120 | OSC 5V SMT PLAS 14X9 CMOS |
| E2SAA10-30.000MTR | QUARTZ CRYSTAL RESONATOR, 30 MHz |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| E28F400BX-B80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T120 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400CVB60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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