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参数资料
| 型号： | E28F400BX-B60 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | ACTUATOR, SWITCH, ROUND, MOMENTARY; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:1000000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes |
| 中文描述： | 256K X 16 FLASH 12V PROM, 60 ns, PDSO56 |
| 封装： | 20 X 14 MM, TSOP-56 |
| 文件页数： | 37/50页 |
| 文件大小： | 449K |
| 代理商： | E28F400BX-B60 |
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28F400BX-TB 28F004BX-TB
AC CHARACTERISTICSWE
Controlled Write Operations(1) (Continued)
Versions
VCC g 5%
28F400BX-60(9)
Unit
28F004BX-60(9)
VCC g 10%
28F400BX-60(10)
28F400BX-80(10)
28F400BX-120(10)
28F004BX-60(10)
28F004BX-80(10)
28F004BX-120(10)
Symbol
Parameter
Notes
Min
Max
Min
Max
Min
Max
Min
Max
tQVPH tPHH RP
VHH Hold
6 8
0
ns
from Valid SRD
tPHBR
Boot-Block
7 8
100
ns
Relock Delay
tIR
Input Rise Time
10
ns
tIF
Input Fall Time
10
ns
NOTES
1 Read timing characteristics during write and erase operations are the same as during read-only operations Refer to AC
characteristics during Read Mode
2 The on-chip WSM completely automates programerase operations programerase algorithms are now controlled inter-
nally which includes verify and margining operations
3 Refer to command definition table for valid AIN
4 Refer to command definition table for valid DIN
5 ProgramErase durations are measured to valid SRD data (successful operation SR7 e 1)
6 For Boot Block ProgramErase RP
should be held at VHH until operation completes successfully
7 Time tPHBR is required for successful relocking of the Boot Block
8 Sampled but not 100% tested
9 See High Speed Test Configuration
10 See Standard Test Configuration
BLOCK ERASE AND WORDBYTE WRITE PERFORMANCE
VPP e 120V g5%
Parameter
Notes
28F400BX-60
28F400BX-80
28F400BX-120
Unit
28F004BX-60
28F004BX-80
28F004BX-120
Min
Typ(1)
Max
Min
Typ(1)
Max
Min
Typ(1)
Max
BootParameter
2
10
7
10
7
10
7
s
Block Erase Time
Main Block
2
24
14
24
14
24
14
s
Erase Time
Main Block Byte
2
12
42
12
42
12
42
s
Program Time
Main Block Word
2
06
21
06
21
06
21
s
Program Time
NOTES
1 25 C
2 Excludes System-Level Overhead
42
相关PDF资料 |
PDF描述 |
|---|---|
| E28F400BX-B80 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T120 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F004BX-T120 | OSC 5V SMT PLAS 14X9 CMOS |
| E2SAA10-30.000MTR | QUARTZ CRYSTAL RESONATOR, 30 MHz |
| E2SDA18-13.560M | QUARTZ CRYSTAL RESONATOR, 13.56 MHz |
相关代理商/技术参数 |
参数描述 |
|---|---|
| E28F400BX-B80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T120 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400CVB60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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