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| 型号： | E28F400BX-B60 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | ACTUATOR, SWITCH, ROUND, MOMENTARY; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:1000000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes |
| 中文描述： | 256K X 16 FLASH 12V PROM, 60 ns, PDSO56 |
| 封装： | 20 X 14 MM, TSOP-56 |
| 文件页数： | 34/50页 |
| 文件大小： | 449K |
| 代理商： | E28F400BX-B60 |
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28F400BX-TB 28F004BX-TB
Program and Erase Automation
allows program
and erase operations to be executed using a two-
write command sequence to the CUI The internal
Write State Machine (WSM) automatically executes
the algorithms and timings necessary for program
and erase operations including verifications there-
by unburdening the microprocessor or microcontrol-
ler Writing of memory data is performed in word or
byte increments for the 28F400BX family and in byte
increments for the 28F004BX family typically within
9 ms which is a 100% improvement over current
flash memory products
The Status Register (SR) indicates the status of the
WSM and whether the WSM successfully completed
the desired program or erase operation
Maximum Access Time of 60 ns (tACC) is achieved
over the commercial temperature range (0 Cto
70 C) 5% VCC supply voltage range (475V to
525V) and 30 pF output load Maximum Access
Time of 70 ns (tACC) is achieved over the commer-
cial temperature range 10% VCC supply range (45V
to 55V) and 100 pF output load
IPP maximum Program current is 40 mA for x16
operation and 30 mA for x8 operation IPP Erase
current is 30 mA maximum VPP erase and pro-
gramming voltage is 114V to 126V (VPP e 12V
g
5%) under all operating conditions
As an op-
tion VPP can also vary between 108V to 132V (VPP
e
12V g 10%) with a guaranteed number of 100
block erase cycles
Typical ICC Active Current of 25 mA is achieved
for the X16 products (28F400BX) Typical ICC Ac-
tive Current of 20 mA
is achieved for the X8 prod-
ucts (28F400BX 28F004BX) Refer to the ICC active
current derating curves in this datasheet
The 4-Mbit boot block flash memory family is also
designed with an Automatic Power Savings (APS)
feature to minimize system battery current drain and
allows for very low power designs Once the device
is accessed to read array data APS mode will imme-
diately put the memory in static mode of operation
where ICC active current is typically 1 mA until the
next read is initiated
When the CE
and RP
pins are at VCC and the
BYTE
pin (28F400BX-only) is at either VCC or
GND the CMOS Standby mode is enabled where
ICC is typically 50 mA
A Deep Power-Down Mode is enabled when the
RP
pin is at ground minimizing power consumption
and providing write protection during power-up con-
ditions ICC current during deep power-down mode
is 020 mA typical An initial maximum access time
or Reset Time of 300 ns is required from RP
switching until outputs are valid Equivalently the
device has a maximum wake-up time of 215 ns until
writes to the Command User Interface are recog-
nized When RP
is at ground the WSM is reset the
Status Register is cleared and the entire device is
protected from being written to This feature pre-
vents data corruption and protects the code stored
in the device during system reset The system Reset
pin can be tied to RP
to reset the memory to nor-
mal read mode upon activation of the Reset pin
With on-chip programerase automation in the
4-Mbit family and the RP
functionality for data pro-
tection when the CPU is reset and even if a program
or erase command is issued the device will not rec-
ognize any operation until RP
returns to its normal
state
For the 28F400BX Byte-wide or Word-wide In-
putOutput Control
is possible by controlling the
BYTE
pin When the BYTE
pin is at a logic low
the device is in the byte-wide mode (x8) and data is
read and written through DQ 07
During the byte-
wide mode DQ 814 are tri-stated and DQ15A-1
becomes the lowest order address pin When the
BYTE
pin is at a logic high the device is in the
word-wide mode (x16) and data is read and written
through DQ 015
4
相关PDF资料 |
PDF描述 |
|---|---|
| E28F400BX-B80 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T120 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F004BX-T120 | OSC 5V SMT PLAS 14X9 CMOS |
| E2SAA10-30.000MTR | QUARTZ CRYSTAL RESONATOR, 30 MHz |
| E2SDA18-13.560M | QUARTZ CRYSTAL RESONATOR, 13.56 MHz |
相关代理商/技术参数 |
参数描述 |
|---|---|
| E28F400BX-B80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T120 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400CVB60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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