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| 型号： | ECH8602M-TL-H |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 6A ECH8 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 3A，4.5V |
| 闸电荷(Qg) @ Vgs： | 7.5nC @ 4.5V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 8-ECH |
| 包装： | 带卷 (TR) |
Ordering number : ENA1562A
ECH8602M
N-Channel Power MOSFET
30V, 6A, 30m Ω , Dual ECH8
Features
http://onsemi.com
?
?
?
2.5V drive
Common-drain type
Protection diode in
?
?
Best suited for LiB charging and discharging switch
Halogen free compliance
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
30
±12
6
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
IDP
PD
PT
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm) 1unit
When mounted on ceramic substrate (900mm 2 × 0.8mm)
60
1.4
1.5
150
--55 to +150
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-003
Product & Package Information
? Package : ECH8
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
Top View
2.9
ECH8602M-TL-H
Packing Type : TL
Marking
0.15
8
5
0 to 0.02
TL
TZ
Lot No.
1
0.65
4
0.3
Electrical Connection
8 7 6 5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
1
2
3
4
8 : Drain
Bottom View
ECH8
Semiconductor Components Industries, LLC, 2013
July, 2013
71112 TKIM/21710PE TKIM TC-00002221 No. A1562-1/7
相关PDF资料 |
PDF描述 |
|---|---|
| ECH8649-TL-H | MOSFET N-CH DUAL 20V 7.5A ECH8 |
| ECH8651R-TL-HX | MOSFET N-CH DUAL 24V 10A ECH8 |
| ECH8651R-TL-H | MOSFET N-CH DUAL 24V 10A ECH8 |
| ECH8652-TL-H | MOSFET P-CH 12V 6A ECH8 |
| ECH8653-TL-H | MOSFET N-CH DUAL 20V 7.5A ECH8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ECH8603 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ECH8603-TL-E | 制造商:SANYO 功能描述:P+P 20V 4A ECH8 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET PP CH 20V 4A ECH8 制造商:Sanyo 功能描述:0 |
| ECH8604 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N CHANNEL MOS SILICON TRANSISTOR |
| ECH8604-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 6A ECH8 |
| ECH8605 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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