参数资料
型号: ECH8659-TL-H
厂商: ON Semiconductor
文件页数: 4/7页
文件大小: 0K
描述: MOSFET N-CH DUAL 30V 7A ECH8
标准包装: 3,000
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 7A
开态Rds(最大)@ Id, Vgs @ 25° C: 24 毫欧 @ 3.5A,10V
闸电荷(Qg) @ Vgs: 11.8nC @ 10V
输入电容 (Ciss) @ Vds: 710pF @ 10V
功率 - 最大: 1.5W
安装类型: 表面贴装
封装/外壳: 8-SMD,扁平引线
供应商设备封装: 8-ECH
包装: 带卷 (TR)
ECH8659
10
VGS -- Qg
100
ASO
ms
0m
era
t i o
0 μ
s
9
8
7
6
5
4
3
VDS=15V
ID=3.5A
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
IDP=40A
ID=7A
Operation in this
area is limited by RDS(on).
DC
10
op
10
s
1m
n
PW ≤ 10 μ s
10
s
0.1
2
1
0
7
5
3
2
0.01
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm 2 ?0.8mm) 1unit
0
1
2
3
4
5
6
7
8
9
10
11
12
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5
1.8
1.6
Total Gate Charge, Qg -- nC IT13731
PD -- Ta
When mounted on ceramic substrate
(900mm 2 ? 0.8mm)
Drain-to-Source Voltage, VDS -- V
IT13732
1.5
1.4
1.3
1.2
To
al
nit
1.0
0.8
1u
t
Di
ss
ip
a i t
on
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- ° C
IT13733
No. A1224-4/7
相关PDF资料
PDF描述
ECH8660-TL-H MOSFET N/P-CH 30V 4.5A ECH8
ECH8661-TL-H MOSFET N/P-CH 30V 7A ECH8
ECH8662-TL-H MOSFET N-CH DUAL 40V 6.5A ECH8
ECH8667-TL-H MOSFET P-CH DUAL 30V 5.5A ECH8
ECH8668-TL-H MOSFET N/P-CH 20V 7.5A ECH8
相关代理商/技术参数
参数描述
ECH8659-TL-HX 制造商:ON Semiconductor 功能描述:NCH+NCH 4V DRIVE SERIES - Tape and Reel
ECH8660 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications
ECH8660_10 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ECH8660-S-TL-H 制造商:ON Semiconductor 功能描述:PCH+NCH 4V DRIVE SERIES - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / PCH+NCH 4V DRIVE SERIES
ECH8660-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube