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参数资料
| 型号： | ECH8675-TL-H |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 20V 4.5A ECH8 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 46 毫欧 @ 3A，4.5V |
| 闸电荷(Qg) @ Vgs： | 7.3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 670pF @ 10V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 8-ECH |
| 包装： | 带卷 (TR) |
Ordering number : ENA1437A
ECH8675
P-Channel Power MOSFET
–20V, –4.5A, 46m Ω , Dual ECH8
Features
http://onsemi.com
?
?
?
?
1.8V drive
Composite type, facilitating high-density mounting
Halogen free compliance
Protection diode in
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
--20
±10
--4.5
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
PT
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (1200mm 2 × 0.8mm) 1unit
When mounted on ceramic substrate (1200mm 2 × 0.8mm)
--30
1.3
1.5
150
--55 to +150
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-001
Top View
ECH8675-TL-H
Product & Package Information
? Package : ECH8
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
2.9
0.15
Packing Type : TL
Marking
8
5
0 to 0.02
TL
TW
LOT No.
1
0.65
4
0.3
Electrical Connection
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
2
3
4
Bottom View
ECH8
Semiconductor Components Industries, LLC, 2013
July, 2013
70412 TKIM/40809PE MSIM TC-00001913 No. A1437-1/7
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